Investigation of recombination parameters of nonequilibrium charge carriers in Si technological plates by thermal imaging method




recombination parameter, lifetime of nonequilibrium charge carriers, diffusion length, surface recombination velocity, monocrystalline silicon


The research approach on the investigation of recombination parameters of nonequilibrium charge carriers in Si technological plates by thermal imaging method is offered in this paper. The lifetime, diffusion length and surface recombination velocity of charge carriers are taken into account. The method is based on a study of the spatial distribution of Si samples thermal radiation beyond the self-absorption edge in the spectral range of 3–5 μm using by an IR camera. There are experimental results of silicon technological samples researches: distribution of the excess charge carriers concentration in silicon samples (n-Si, r = 500 Ω∙cm, d = 8 mm) and the diffusion distribution of charge carriers at T = 150 °C. Temperature dependence of the diffusion length and volumetric lifetime in silicon samples is measured by three different methods: using an IR camera, by the kinetics of thermal radiation decline beyond the self-absorption edge during laser excitation, and by the method of photoconductivity attenuation. This approach is implemented in the process of input control of silicon plates used for solar panels manufacture at JSC “Quasar.”


V. I. Staroselskiy, Physics of semiconductor microelectronic devices, [in Russian]. Moscow: Yurayt, 2019.

L. А. Skvortsov, Fundamentals of photometric radiometry and laser thermography, [in Russian]. Moscow: Technosphere, 2017.

Y. Zeng et al., “Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (topcon) solar cells,” Sol. Energy, vol. 155, pp. 654–660, 2017, doi:

V. D. Akhmetov, N. V. Fateev, “Infrared tomography of the charge-carrier lifetime and diffusion length in semiconductor-grade silicon ingots,” Semiconductors, vol. 35, no. 1, pp. 40–47, 2001, doi:

V. Malyutenko, S. Chyrchyk, “Surface recombination velocity in si wafers by photoinduced thermal emission,” Appl. Phys. Lett., vol. 89, no. 5, p. 051909, 2006, doi:

S. V. Chyrchyk, “Express method of finding recombination parameters in technological silicon plates,” Radioelectron. Commun. Syst., vol. 55, no. 3, pp. 136–139, 2012, doi:

G. G. Macfarlane, T. P. McLean, J. E. Quarrington, V. Roberts, “Fine structure in the absorption-edge spectrum of si,” Phys. Rev., vol. 111, no. 5, pp. 1245–1254, 1958, doi:

K. Rajkanan, R. Singh, J. Shewchun, “Absorption coefficient of silicon for solar cell calculations,” Solid-State Electron., vol. 22, no. 9, pp. 793–795, 1979, doi:

W. L. Ng, M. A. Lourenço, R. M. Gwilliam, S. Ledain, G. Shao, K. P. Homewood, “An efficient room-temperature silicon-based light-emitting diode,” Nature, vol. 410, no. 6825, pp. 192–194, 2001, doi:

H. R. Philipp, E. A. Taft, “Optical constants of silicon in the region 1 to 10 ev,” Phys. Rev., vol. 120, no. 1, pp. 37–38, 1960, doi:

F. López, E. Bernabéu, “Refractive index of vacuum-evaporated sio thin films: dependence on substrate temperature,” Thin Solid Film., vol. 191, no. 1, pp. 13–19, 1990, doi:

V. K. Malyutenko, “Si photonics expands to mid-wave and long-wave infrared: the fundamentals and applications,” in Silicon Photonics XI, 2016, vol. 9752, p. 97521D, doi:

D. L. Stierwalt, R. F. Potter, “Infra-red spectral emittance of si, ge and cds,” in Proc. Int. Conf. Phys. Semicond., 1962, p. 513.

S. S. Bolgov, V. I. Pipa, О. Y. Salyuk, А. S. Arutyunov, “On question of modulation of semiconductors thermal radiation,” Ukr. J. Phys., vol. 38, no. 1, p. 19, 1993.

R. Brendel, M. Bail, B. Bodmann, J. Kentsch, M. Schulz, “Analysis of photoexcited charge carrier density profiles in si wafers by using an infrared camera,” Appl. Phys. Lett., vol. 80, no. 3, pp. 437–439, 2002, doi:

M. Schubert, J. Isenberg, S. Rein, W. Warta, “Temperature dependent carrier lifetime images,” in Proc. of 19th European Photovoltaic Solar Energy Conference, 2004, uri:

S. М. Fainshtein, Surface treatment of semiconductor devices, [in Russian]. Moscow: Energia, 1966.

P. V. Bulaev et al., “MOCVD-grown ingaas/gaas/algaas laser structures with a broad-area contact,” Semiconductors, vol. 36, no. 9, pp. 1065–1069, 2002, doi:

V. K. Malyutenko, G. I. Teslenko, “Determination of minority carrier lifetime by thermal emission method,” Electron Technol., vol. 24, no. 3–4, p. 97, 1991.

L. P. Pavlov, Methods for measuring parameters of semiconductor materials, [in Russian]. Moscow: Vyssh. Shkola, 1987.

C. Jacoboni, C. Canali, G. Ottaviani, A. Alberigi Quaranta, “A review of some charge transport properties of silicon,” Solid-State Electron., vol. 20, no. 2, pp. 77–89, 1977, doi:

А. I. Anselm, Introduction to Semiconductor Theory: A Study Guide, 4th ed., [in Russian]. St. Petersburg: Lan, 2017.





Research Articles