Temperature stable radiation-resistant current reference based on FET

I. M. Vikulin; L. F. Vikulina; V. E. Gorbachev; N. S. Mikhailov

doi:10.3103/S0735272721060042

Authors

I. M. Vikulin National University “Odessa Maritime Academy”, Odessa, Ukraine https://orcid.org/0000-0003-3887-6676
L. F. Vikulina Odessa State Agrarian University, Odessa, Ukraine https://orcid.org/0000-0002-5467-5439
V. E. Gorbachev O.S. Popov Odessa National Academy of Telecommunications, Odessa, Ukraine https://orcid.org/0000-0002-6668-6864
N. S. Mikhailov National University “Odessa Maritime Academy”, Odessa, Ukraine

DOI:

https://doi.org/10.3103/S0735272721060042

Keywords:

JFET, MOSFET, temperature coefficient of reference current, current reference, radiation resistance

Abstract

The influence of temperature and ionized radiation on the properties of current stabilizers, based on JFETs with p-n-junction as a gate and MOSFETs in saturation mode at two-pole connecting when the gate and source are closed, is experimentally investigated. It is shown that current temperature coefficient of the JFET is negative, and the one of the second type is positive. Connecting a stabilizing resistor of a proper value to the FET source circuit allows us to reduce the temperature changes in the output current of stabilizer at one FET to a minimum for both JFET with p-n-junction and MOSFET. However, in this method of temperature stabilization of output current, the output power of stabilizer is significantly reduced. For the first time the suggested design of the current reference operates on the principle of compensation of external influences on device, composed of two different types of FET with inverse reaction to this influence. It was experimentally proved that by parallel connection of such transistor pairs, it is possible to get a stable current reference generator in a wide temperature range. Moreover, experiments have shown that if a MOSFET with small drain saturation current is selected for the current reference, then the effect of ionizing radiation on the entire device will be compensated, since after radiation the current through such MOSFET will increase, and the current through JFET will decrease.

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