Combined sensor-converter of light based on oscillator with unijunction transistor

Authors

DOI:

https://doi.org/10.3103/S0735272724110050

Keywords:

unijunction transistor, field-effect transistor, gate structure, photo-sensitivity, output frequency, integrated circuit

Abstract

A sensor-converter of light radiation has been developed based on an oscillator with a unijunction photo-transistor. To enhance photo-sensitivity, the oscillator circuit incorporates a field-effect transistor with a semiconductor gate in the form of a longitudinal structure from parts of opposite conductivity types.

References

  1. V. M. Sharapov, E. S. Polischuk, A. N. Gurzhii, Sensors, [in Russian]. Cherkassy: Brama-Ukraine, 2008.
  2. G. G. Babichev, S. I. Kozlovskiy, V. A. Romanov, N. N. Sharan, “Silicon strain sensitive unijunction transistor with controlling p–n-junction,” Sensors Actuators A Phys., vol. 100, no. 2–3, pp. 236–243, 2002, doi: https://doi.org/10.1016/S0924-4247(02)00140-1.
  3. I. M. Vikulin, L. F. Vikulina, V. E. Gorbachev, N. S. Mikhailov, “Combined semiconductor injection magnetic field sensors for wireless information networks,” Radioelectron. Commun. Syst., vol. 63, no. 7, pp. 368–375, 2020, doi: https://doi.org/10.3103/S0735272720070043.
  4. V. G. Verbitskyi et al., Development of high-efficiency technologies of optoelectronics and communication systems on their basis, [in Ukrainian]. Kyiv: Logos, 2009.
  5. I. M. Vikulin, S. D. Kurmashev, L. F. Vikulina, V. I. Stafeev, “Frequency-output sensors-transducers based on unijunction transistors,” J. Commun. Technol. Electron., vol. 59, no. 3, pp. 275–281, 2014, doi: https://doi.org/10.1134/S1064226914030139.
  6. V. H. Lytovchenko, M. V. Strikha, Solar Energy, [in Ukrainian]. Kyiv: K.І.S., 2015.
FEPT with longitudinal semiconductor structure as gate

Published

2024-10-26

Issue

Section

Brief Communications