Thermostable sensor-converter of optical radiation with frequency output based on single-junction transistor oscillator

I. M. Vikulin; Oleksandr Nazarenko

doi:10.3103/S0735272723110055

Authors

I. M. Vikulin State University of Intelligent Technologies and Telecommunications, Odesa, Ukraine https://orcid.org/0000-0003-3887-6676
Oleksandr Nazarenko State University of Intelligent Technologies and Telecommunications, Odesa, Ukraine https://orcid.org/0000-0002-0187-0791

DOI:

https://doi.org/10.3103/S0735272723110055

Keywords:

sensor with frequency output, single-junction transistor, field-effect transistor, radiation flux, temperature effect, thermal stability

Abstract

The paper considers the effect of temperature on an optical radiation sensor based on an oscillator with single-junction (SJT) and field-effect (FET) transistors, the output signal of which is the frequency proportional to the radiation intensity. Under the impact of temperature, the parameters of transistors change, causing frequency instability in the temperature. For thermal stabilization of the output signal, a second FET2 with the opposite sign of the current dependence on temperature and adjustable thermal sensitivity is connected in parallel to the first FET1. As a result, the temperature effects of all three transistors on the generation frequency are mutually compensated, and the output frequency is thermally stabilized.

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