Effect of penetrating radiation on sensitivity of magnetotransistors





magnetotransistor, magnetosensitivity, radiation


An experimental study of the effect of radiation emissions (neutrons, gamma radiation) on the sensitivity of industrial bipolar n-p-n magnetotransistors has been carried out. It has been shown that neutron irradiation leads to defects in the structure, which reduces the effective lifetime of the injected charge carriers and decreases the magnetosensitivity. Gamma radiation with increasing intensity first destroys the surface structural defects and increases the lifetime of carriers and magnetoresponsiveness, and then penetrates deeper forming defects and reducing magnetoresponsiveness. This makes it possible to use gamma radiation with an intensity of up to 107 R as a technological method of increasing magnetosensitivity.


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Dependence of volt-ampere characteristic on the magnetic field





Brief Communications