Effect of penetrating radiation on sensitivity of magnetotransistors

Ivan Vikulin; Oleksandr Nazarenko; Lidiya Vikulina; Pavlo Markolenko

doi:10.3103/S0735272723060055

Authors

Ivan Vikulin State University of Intelligent Technologies and Telecommunications, Odesa, Ukraine https://orcid.org/0000-0003-3887-6676
Oleksandr Nazarenko State University of Intelligent Technologies and Telecommunications, Odesa, Ukraine https://orcid.org/0000-0002-0187-0791
Lidiya Vikulina Odessa State Agrarian University, Odesa, Ukraine https://orcid.org/0000-0002-5467-5439
Pavlo Markolenko State University of Intelligent Technologies and Telecommunications, Odesa, Ukraine https://orcid.org/0000-0001-5636-5111

DOI:

https://doi.org/10.3103/S0735272723060055

Keywords:

magnetotransistor, magnetosensitivity, radiation

Abstract

An experimental study of the effect of radiation emissions (neutrons, gamma radiation) on the sensitivity of industrial bipolar n-p-n magnetotransistors has been carried out. It has been shown that neutron irradiation leads to defects in the structure, which reduces the effective lifetime of the injected charge carriers and decreases the magnetosensitivity. Gamma radiation with increasing intensity first destroys the surface structural defects and increases the lifetime of carriers and magnetoresponsiveness, and then penetrates deeper forming defects and reducing magnetoresponsiveness. This makes it possible to use gamma radiation with an intensity of up to 10⁷ R as a technological method of increasing magnetosensitivity.

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