Thyristors controlled by light and magnetic field

Ivan Vikulin; Lidiya Vikulina; Pavlo Markolenko; Oleksandr Nazarenko

doi:10.3103/S0735272723010053

Authors

Ivan Vikulin State University of Intelligent Technologies and Telecommunications, Odesa, Ukraine http://orcid.org/0000-0003-3887-6676
Lidiya Vikulina Odessa State Agrarian University, Odessa, Ukraine http://orcid.org/0000-0002-5467-5439
Pavlo Markolenko State University of Intelligent Technologies and Telecommunications, Odesa, Ukraine https://orcid.org/0000-0001-5636-5111
Oleksandr Nazarenko State University of Intelligent Technologies and Telecommunications, Odesa, Ukraine https://orcid.org/0000-0002-0187-0791

DOI:

https://doi.org/10.3103/S0735272723010053

Keywords:

photothyristor, breakover voltage, magnetic field induction, light emission diode, light flow, current-voltage characteristics

Abstract

In this paper an impact of external magnetic field on current-voltage characteristics of a planar silicon photothyristor is researched experimentally. It is shown that magnetic field of one polarity with induction of 0.4 T results in such decrease of the breakover voltage U_B as well as an LED emission at current of 8 mA. But magnetic field of the opposite polarity allows to increase U_B. There are represented the formulas for calculation of the dependence of U_B on magnetic field. Increase of magnetic sensitivity is achieved by placement of the area with high rate of injected charge carriers recombination at the opposite side of the electrodes at the base side. Double contactless control of the thyristor U_B with light and magnetic field allows to increase essentially its functional possibilities. Since the thyristor can only be turned on by light emission, it can also be turned off by the magnetic field impact. It is shown that existing industrial optical couplers can be used as optrons controlled with light emission and magnetic field, but magnetic control thyristor can be used as a simple switch.

References

V. G. Verbitskyi et al., Development of High-Efficiency Technologies of Optoelectronics and Communication Systems on their Basis, [in Ukrainian]. Kyiv: Logos, 2009.

M. H. Nakhodkin, F. F. Syzov, Elements of Functional Electronics, [in Russian]. Kyiv: Ukr. INTEI, 2002.

I. M. Vikulin, L. F. Vikulina, V. E. Gorbachev, Magnetosensitive Semiconductor Sensors. Odessa: ONAZ, 2016.