Structural and parametric optimization of bandgap voltage reference




The article shows the possibility of reducing the temperature coefficient for the bandgap voltage reference (BVR) built on bipolar transistors. To do this, as the first step, it is proposed to divide the temperature range of BVR operation into two intervals. Since the most probable working interval corresponds to the range of positive temperatures, such division makes it possible to halve the temperature coefficient for the most probable working area on condition of an appropriate BVR adjustment. The introduction of weights for BVR optimization involves giving preference to the working interval of positive temperatures. It provides a direction of search for the optimal solution when formalizing the optimization process. The second step involves the proposal of a functional block diagram with compensators of the decline of temperature characteristic. The paper also proposes electric circuits of a typical compensator and the circuits for connecting one and two compensators to uncompensated BVR. This also determines the rule of introducing further compensators, if expedient. The parametric optimization of the proposed BVR circuits and the experimental study of BVR circuit with one compensation link have been performed. The above optimization resulted in a reduced value of temperature coefficient at the level of 2.88 ppm/°C for the circuit with one compensator and 1.0 ppm/°C for the case of connecting two compensators to BVR circuit that surpasses the latest published achievements. When expanding the temperature range into the area of low temperatures and using additional compensators in accordance with the specified schematic block diagram, we could expect the reduction of the temperature coefficient to 0.25–0.5 ppm/°C.


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BVR temperature relationship of output voltage with respect to level of 1.2 V for three specimens of BVR in range of 10…150 °C





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