Decrease of surface recombination in single-crystalline silicon by means of pulse laser film deposition with silicon quantum points

S. V. Chyrchyk

doi:10.3103/S0735272722030037

Authors

S. V. Chyrchyk Mykhailo Boichuk Kyiv State Academy of Decorative-Applied Arts and Design, Kyiv, Ukraine https://orcid.org/0000-0002-0158-5253

DOI:

https://doi.org/10.3103/S0735272722030037

Abstract

In this paper it is proposed a method of suppress of surface recombination in c-Si by means of modification of its surface with nanoparticles. Silicon nanocomposites containing quantum-dimensional particles of Si in SiO₂ matrix characterized with increased width of forbidden states in case of its deposition at c-Si substrate shape a heterojunction nc-Si/c-Si whose potentional barrier promotes the surface charge carriers lifetime increase. The experimental results are represented. The method is tested in industrial conditions using technology silicon slices. It is proved the possibility of decrease of surface recombination in single-crystalline silicon by means of its surface passivation in case of pulse laser deposition of films with silicon quantum points.

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