On mechanism of radiative sensitivity of power diode direct voltage drop

Authors

  • Abdulaziz V. Karimov Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan
  • Akhmad Z. Rakhmatov "Foton" Joint-stock Company, Tashkent, Uzbekistan
  • Stanislav P. Skorniakov Novosibirsk Plant of Semiconductor Devices, Russian Federation
  • Dilbara M. Yodgorova Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan
  • Abduvaxob A. Karimov Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan
  • Shukurullo M. Kuliev Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan

DOI:

https://doi.org/10.3103/S0735272717060048

Keywords:

power diod, drop of direct voltage, electrons radiation, lifetime of the minority charge carriers

Abstract

There are carried out experimental researches of dependence of drop of direct voltage of current-voltage characteristics of the silicone power diode on electrons radiation dose. It is stated that dose increase from 2×1014 to 2×1015 Фe/cm2 results in direct voltage drop on the diode increases monotonically, and the lifetime of the minority charge carriers decreases by a factor of ten. It is shown the dominating role of decrease of minority charge carriers density in the base together with majority charge carries lifetime at forming of current-voltage characteristics of after irradiation by electrons.

References

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Published

2017-06-30

Issue

Vol. 60 No. 6 (2017)

Section

Research Articles