Influence of neutron radiation on breakdown voltage of silicon voltage limiter

Authors

  • Akhmad Z. Rakhmatov "Foton" Joint-stock Company, Tashkent, Uzbekistan
  • Dmitriy Aleksandrovich Petrov JSC "FOTON" Branch Office, Ukraine
  • Abdulaziz V. Karimov Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan
  • Dilbara M. Yodgorova Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan
  • Oybek Abdullazizovich Abdulkhaev Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan

DOI:

https://doi.org/10.3103/S0735272712070060

Keywords:

neutron radiation, breakdown voltage, voltage limiter

Abstract

Experimental study of silicon voltage limiters’ breakdown voltage dependence on neutron radiation was conducted. It revealed that with increase of radiation density from 0.1×1014 to 2×1015 N/cm2 the breakdown voltage monotonously increases: the smaller the breakdown voltage, the higher radiation density is needed to provide nominal breakdown voltage. Test curves which may be used for stabilization (normalization) of the breakdown voltage for samples with technological variations are suggested.

References

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Published

2012-07-01

Issue

Section

Research Articles