Express method of finding recombination parameters in technological silicon plates

S. V. Chyrchyk

doi:10.3103/S0735272712030053

Authors

S. V. Chyrchyk Mykhailo Boichuk Kyiv State Academy of Decorative-Applied Arts and Design, Ukraine

DOI:

https://doi.org/10.3103/S0735272712030053

Keywords:

recombination parameter, surface recombination, silicon plate

Abstract

In this paper a new method of finding recombination parameters, such as surface recombination rate, "effective" and "bulk" lifetime of charge carriers, of a silicon plate based on only one measurement. This method is grounded on injection of charge carriers by pulse illumination of a local region of semiconductor’s fundamental absorption region with light and measuring the time dependence of concentration of non-equilibrium charge carriers. The method is tested in manufacturing conditions on technological silicon plates and may be used for quality control in manufacturing of solar elements.

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