Electromagnetic compatibility characteristics of low-noise amplifier on field transistor with Shottky gate under the impact of ultra-short pulse interference

Anatoly M. Bobreshov; I. S. Korovchenko; Vladislav A. Stepkin; Grigorii K. Uskov

doi:10.3103/S0735272711120053

Authors

Anatoly M. Bobreshov Voronezh State University, Russian Federation https://orcid.org/0000-0002-5429-3780
I. S. Korovchenko Voronezh State University, Russian Federation
Vladislav A. Stepkin Voronezh State University, Russian Federation https://orcid.org/0000-0002-3616-3974
Grigorii K. Uskov Voronezh State University, Russian Federation https://orcid.org/0000-0001-8250-2511

DOI:

https://doi.org/10.3103/S0735272711120053

Keywords:

electromagnetic compatibility, transistor with Shottky gate, low-noise amplifier

Abstract

The electromagnetic compatibility characteristics of input low-noise amplifiers under the impact of ultra-short video pulses and a methodology for their measurement are suggested. The computer-aided measuring test bench, which implements this procedure, is described. Ways of optimizing operation of low-noise amplifier under the impact of pulse interference are introduced based on the measured experimental dependences.

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