Calculation of resonance frequencies of electrons present in the contact area of two semiconductors
DOI:
https://doi.org/10.3103/S0735272711050074Keywords:
сontact, frequency, potential, oscillation, electron gas, Tomas–Fermi potential, induction force, resonance frequency, n-type and semiconductorsAbstract
Two multielectron atoms with valence bond have been considered. Oscillations of the valence electron were determined with due regard for the influence of two nuclei and electron gas. The resonance frequencies were determined with due regard for the gradient induction forces of electric field. The electric equivalent circuit has been found. The causes of the changing polarity of the electromotive force depending on the frequency of the monochromatic electric field applied to the contact are explained.
References
S. M. Sze, Physics of Semiconductor Devices, Vol. 1 (Wiley, New York, 1985; Mir, Moscow, 1984).
T. V. Blank and Yu. A. Gol’dberg, “The Mechanism of Current Passage in Ohmic Metal-Semiconductor Contacts,” Fizika i Tekhnika Poluprovodnikov 41, No. 11, 1281 (2007).
A. L. Farenbruch and R. H. Bube, Fundamentals of Solar Cells (Academic Press, New York, 1983; Energoatomizdat, Moscow, 1987).
Sh. K. Kaniazov, K. A. Ismailov, and A. S. Muratov, “The Quantum Theory of Optoelectronic Processes in Multilayer Semiconductors,” Uzbekskii Fizicheskii Zhurnal, No. 3, 146 (2002).
P. E. Toshek, “Atomic Particles in Traps,” Ukrainskii Fizicheskii Zhurnal 158, No. 3, 451 (1989).
A. G. Alenitsyn, E. I. Butikov, and A. S. Kondrat’ev, Quick-Reference Physicomathematical Book (GRFML, Moscow, 1990) [in Russian].
Sh. K. Kaniazov, K. A. Ismailov, and A. S. Muratov, “On One Solution of the Thomas-Fermi Equation and its Application in the Theory of Contacts,” Uzbekskii Fizicheskii Zhurnal, No. 5–6, 376 (2000).
M. Duisenbaev, M. A. Kan, and S. A. Auezov, “On the Properties of nZn–nGaAs Multilayer Semiconductor Structures,” Uzbekskii Fizicheskii Zhurnal, No. 4, 69 (2002).
