Simulation of circuit of autodyne sensor with field-controlled transistor

V. V. Brajlovskyj; A. D. Veryga; Z. Ju. Gotra; N. Ja. Kushnir

doi:10.3103/S0735272710100055

Authors

V. V. Brajlovskyj Yuriy Fedkovych Chernivtsi National University, Ukraine
A. D. Veryga Yuriy Fedkovych Chernivtsi National University, Ukraine
Z. Ju. Gotra Lviv Polytechnic National University, Ukraine
N. Ja. Kushnir Yuriy Fedkovych Chernivtsi National University, Ukraine

DOI:

https://doi.org/10.3103/S0735272710100055

Keywords:

autodyne sensor, transistor

Abstract

The autodyne sensor operation modelling was carried out. Authors took into account frequency dependence of the field transistor parameters. The shape and a spectrum of generated oscillations in control points of the autodyne sensor circuit were researched, depending on position of an operating point of the transistor. It is revealed, that a condition of the least distortion of the generated oscillations shape is position of a working point of the transistor in the region of camber of its transfer characteristic. Modelling was carried out with Micro-Cap application.

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