Procedure for building a MOS transistor high frequency small-signal model
DOI:
https://doi.org/10.3103/S0735272710070034Keywords:
MOSFET, RF IC design, small-signal MOSFET modeling, BSIM, parameter extractionAbstract
This paper examines a procedure for building a MOS transistor small-signal equivalent circuit for the high frequency range. Procedures are proposed for determining the ac and dc parameters. The simulation results and experimental data are also presented.
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