Procedure for building a MOS transistor high frequency small-signal model

S. Borisov; Alexander S. Korotkov

doi:10.3103/S0735272710070034

Authors

S. Borisov Saint Petersburg State Polytechnical University, Russian Federation
Alexander S. Korotkov Peter the Great Saint Petersburg Polytechnic University, Russian Federation https://orcid.org/0000-0001-8407-6528

DOI:

https://doi.org/10.3103/S0735272710070034

Keywords:

MOSFET, RF IC design, small-signal MOSFET modeling, BSIM, parameter extraction

Abstract

This paper examines a procedure for building a MOS transistor small-signal equivalent circuit for the high frequency range. Procedures are proposed for determining the ac and dc parameters. The simulation results and experimental data are also presented.

References

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