Procedure for building a MOS transistor high frequency small-signal model

Authors

  • S. Borisov Saint Petersburg State Polytechnical University, Russian Federation
  • Alexander S. Korotkov Peter the Great Saint Petersburg Polytechnic University, Russian Federation https://orcid.org/0000-0001-8407-6528

DOI:

https://doi.org/10.3103/S0735272710070034

Keywords:

MOSFET, RF IC design, small-signal MOSFET modeling, BSIM, parameter extraction

Abstract

This paper examines a procedure for building a MOS transistor small-signal equivalent circuit for the high frequency range. Procedures are proposed for determining the ac and dc parameters. The simulation results and experimental data are also presented.

References

Y. Cheng, M. J. Deen, and C. Chen, “MOSFET Modeling for RF IC Design,” IEEE Trans. Electron Devices 52, No. 7, 1286 (2005).

C. Enz, “An MOS Transistor Model for RF IC Design Valid in All Regions of Operation,” IEEE Trans. Microwave Theory Tech. 50, No. 1, 342 (2002).

C. Enz and Y. Cheng, “MOS Transistor Modeling for RF IC Design,” IEEE J. Solid-State Circuits 35, No. 2, 186 (2000).

Y. Cheng, “High Frequency Small–Signal AC and Noise Modeling of MOSFET for RF IC Design,” IEEE Trans. Electron Devices 49, No. 3, 400 (2002).

BSIM3v3 Manual (UC Berkley, 2005), Ch. 4, pp. 5–23.

W. Y. Choi, H. Kim, B. Lee, et al., “Park Stable Threshold Voltage Extraction Using Tikhonov’s Regularization Theory,” IEEE Trans. Electron Devices 51, No. 11, 1833 (2004).

Published

2010-07-03

Issue

Section

Research Articles