Class E microwave amplifier built on a SiC transistor with high on-state resistance

Authors

  • Vladimir G. Krizhanovski Donetsk National University, Ukraine https://orcid.org/0000-0002-2685-9740
  • D. G. Makarov Donetsk National University, Ukraine
  • A. A. Kistchinsky Microwave Systems Joint-Stock Company, Russian Federation

DOI:

https://doi.org/10.3103/S0735272710060026

Keywords:

class E amplifier, SiC transistor, efficiency on state resistance

Abstract

Theoretical and experimental investigations of a wide-band microstrip-design class E amplifier on a SiC MESFET have been performed with due regard for the transistor on-state resistance. The efficiency versus passband relationships obtained by experiments are in good agreement with the results of theoretical calculation.

References

  1. A. Sayed and G. Boeck, “Two–stage ultrawide–band 5–W power amplifier using SiC MESFET,” IEEE Trans. Microwave Theory Tech. 53, No. 7, 2441 (2005).
  2. A. A. Kistchinsky, “Power amplifiers on SiC-transistors operating in the range 0.8–2.5 GHz,” in Proc. of 16 Int. Krymskaya Conf. “SVCh-Tekhnika i Telekommunikatsionnye Tekhnologii,” 11–15 September 2006, Sevastopol, Ukraine (Veber, Sevastopol, 2006), pp. 171–172.
  3. M. Franco and A. Katz, “Class–E silicon carbide VHF amplifier,” IEEE MTT-S Int. Microwave Symp. Dig., June, 19 (2007).
  4. V. G. Krizhanovski, High Efficiency Transistor Amplifiers (Apeks, Donetsk, 2004) [in Russian].
  5. R. S. Pengelly, “A comparison between class E power amplifiers employing LDMOS FETs and SiC MESFETs,” in Proc. of IEEE Tech. Conf. Wireless and Microwave (2004), pp. 1–4.
  6. V. G. Krizhanovski, V. A. Pryntsovskii, D. V. Babko, and I. A. Pozhydaev, UA Patent No. 23407, Byull. Izobret., No. 7 (2007).
  7. D. G. Makarov, V. A. Printsovskii, V. G. Krizhanovski, and A. A. Kistchinsky, “SIC MESFET class E microwave power amplifier,” in Proc. of XVII Int. Conf. of Microwaves “Radar and Wireless Communication,” MIKON–2008, May 19–21, 2008, Wroclaw, Poland (Wroclaw, 2008), Vol. 3, pp. 591–593.
  8. V. G. Krizhanovski and V. A. Printsovskii, “A Microstrip Version of Class-E Microwave Amplifier,” Izv. Vyssh. Uchebn. Zaved., Radioelektron. 48(1), 3 (2005); Radioelectron. Commun. Syst. 48(1), 1 (2005).
  9. V. G. Krizhanovski and V. A. Printsovskii, “Harmonic Filtration Circuit in the Class E Microwave Power Amplifier with Broadened Band,” in Proc. of 17 Int. Krymskaya Conf. “SVCh-tekhnika i telekommunikatsionnye tekhnologii,” Sevastopol, Ukraine, 10–14 September 2007 (Veber, Sevastopol, 2007), pp. 58–59.
  10. P. Alinikula, “Optimum component values for a lossy Class E power amplifier,” IEEE MTT-S Int. Microwave Symp. Dig. 3, 2145 (2003).
  11. A. Sayed, “Ultra Wideband 5WHybrid Power Amplifier Design Using Silicon Carbide MESFETS,” Thesis on Master of Engineering, http://edocs.tu–berlin.de/diss/2005/sayed_ahmed.pdf.
  12. I. Angelov, N. Rorsman, J. Stenarson, et al., “An empirical table–based FET model,” IEEE Trans. Microwave Theory Tech. 47, 2350 (1999).

Downloads

Published

2010-06-02

Issue

Vol. 53 No. 6 (2010)

Section

Research Articles