Analysis of nonlinear effects and calculation of EMC characteristics of SHF amplifier based on heterojunction bipolar transistor

Authors

  • L. I. Averina Voronezh State University, Russian Federation
  • Anatoly M. Bobreshov Voronezh State University, Russian Federation https://orcid.org/0000-0002-5429-3780
  • A. V. Hripushin Voronezh State University, Russian Federation

DOI:

https://doi.org/10.3103/S0735272709040049

Abstract

Analysis of nonlinear properties of amplifier, based on heterojunction bipolar transistor, under the influence of intensive interferences at the amplifier input was carried out with Walter’s series method. It is shown that nonlinearity level and character depend on mutual compensation of harmonics, which are generated into base and collector circuits, and it is also dependent on correlation betweenTaylorexpansion coefficients of nonlinear elements of equivalent circuit near operating point and transistor input impedance.

References

B. M. Bogdanovich, Nonlinear Distortions in Receive-Amplifying Devices (Svyaz’, Moscow, 1980) [in Russian].

W. Kim, S. Kang, K. Lee, et al., “Analysis of Nonlinear Behavior of Power HBT’s,” IEEE Trans. Microwave Theory Tech. 50(7), 1714 (2002).

M. P. van der Heijden, C. H. de Graaff, and L. C. N. de Vreede, “A Novel Frequency-Independent Third-Order Intermodulation Distortion Cancellation Technique for BJT Amplifiers,” IEEE Journal of Solid-State Circuits 37(9), 1176 (2002).

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Published

2009-04-04

Issue

Vol. 52 No. 4 (2009)

Section

Research Articles