Modification of Au-Ti(W, Cr, TiBx)-GaAs contacts properties caused by external influences

Authors

  • A. B. Kamalov Combined Institute of Natural Sciences of the Karakalpak Branch of the Academy of Sciences of the Republic of Uzbekistan, Uzbekistan

DOI:

https://doi.org/10.3103/S073527270903008X

Abstract

In this paper it is considered an influence of gamma-radiation 60Сo, microwave and ultrasonic processing on electro-physical properties and relaxation of internal stresses in Au–Ti(W, Cr, TiBx)–GaAs contacts, based on GaAs plate, containing n–n+ structures of GaAs. Correlation between radius of curvature of GaAs plates and contact parameters is detected. It is shown experimentally, that modification of electro-physical parameters of diodes with Schottky barrier, based on GaAs is specified by internal stresses relaxation in gallium arsenide structures with contacts.

References

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Published

2009-03-08

Issue

Vol. 52 No. 3 (2009)

Section

Research Articles