Manufacturing regression models of silicon single-crystal photoconverters

Authors

  • N. I. Slipchenko Kharkiv National University, Ukraine
  • V. A. Pis'menetskii Kharkiv National University, Ukraine
  • A. V. Frolov Kharkiv National University, Ukraine
  • N. N. Yanovskaya Kharkiv National University, Ukraine

DOI:

https://doi.org/10.3103/S0735272708110071

Abstract

An experimental regression model has been proposed that specifies the relationship of the efficiency factor of silicon single-crystal photoconverters as a function of the diode (imperfection factor A, series resistance Rs, saturation current I0) and manufacturing (substrate thickness h, thickness of the doping layer of liquid-solution composition hLSC) parameters under conditions of a small lot of (6–12) samples on the basis of the first-order regression equation. The model verification was performed by the F-criterion of Fisher. The search for optimal diode and manufacturing parameters was performed by the efficiency maximum criterion using regression equations.

References

  1. Ya. E. L’vovich and V. N. Frolov, Theoretical Footing of Designing, Technology, and Reliability of Communications-Electronics Equipment (Radio i Svyaz’, Moscow, 1980) [in Russian].
  2. V. A. Antonova, V. N. Borshchev, V. R. Kopach, et al., “Thin Textured Silicon Light-Sensitive Converters with Enhanced Mass-Power Characteristics,” Radiotekhnika, No. 139, 113 (2004).
  3. N. I. Slipchenko, V. A. Pis’menetskii, N. N. Yanovskaya, and A. V. Frolov, “Comprehension Analysis of Diode Parameters of Silicon Photoconverters,” Vostochno-Evropeiskii Zhurnal Peredovykh Tekhnologii, No. 6/2(30), 30 (2007).
  4. V. A. Antonova, V. N. Borshchev, V. R. Kopach, et al., “Physical-and-Technological Peculiarities of Forming Rear-Contact Photodetectors,” Radiotekhnika, No. 137, 148 (2004).

Downloads

Published

2008-11-07

Issue

Vol. 51 No. 11 (2008)

Section

Research Articles