Simulation of the forward voltage impact on the gain of a narrow-base transistor

Authors

  • S. L. Khrypko Zaporozhye State Engineering Academy, Ukraine

DOI:

https://doi.org/10.3103/S073527270807008X

Abstract

Equations have been derived that describe the effect of the forward emitter–base voltage of a bipolar narrow-base transistor on the current gain. The results make it possible to use the model for calculating the processes of charge transfer.

References

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Published

2008-07-08

Issue

Vol. 51 No. 7 (2008)

Section

Research Articles