Effect of external actions on characteristics of gallium arsenide Schottky-barrier diode structures
DOI:
https://doi.org/10.3103/S0735272708020040Abstract
In this paper we analyze briefly literary information about an effect of external actions on electrophysical characteristics of gallium arsenide Schottky-barrier diode structures and their stability to external influences. We discussed radiation changes of gallium arsenide Schottky-barrier diode structures, and also we discuss effects of small radiation dose treatment.
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