Effect of external actions on characteristics of gallium arsenide Schottky-barrier diode structures

Authors

  • A. B. Kamalov Combined Institute of Natural Sciences of the Karakalpak Branch of the Academy of Sciences of the Republic of Uzbekistan, Uzbekistan

DOI:

https://doi.org/10.3103/S0735272708020040

Abstract

In this paper we analyze briefly literary information about an effect of external actions on electrophysical characteristics of gallium arsenide Schottky-barrier diode structures and their stability to external influences. We discussed radiation changes of gallium arsenide Schottky-barrier diode structures, and also we discuss effects of small radiation dose treatment.

References

  1. V. S. Vavilov, B. M. Gorin, N. A. Danilin, et al., Radiation Methods of Solid-State Electronics (Radio i Svyaz’, Moscow, 1990) [in Russian].
  2. O. Yu. Borkovskaya, N. L. Dmitruk, R. V. Konakova, and Yu. A. Tkhorik, “Investigation of radiation defects in GaAs by means of Schottky diode characteristics,” Phys. Stat. Sol. (a) 48, No. 1, K55 (1978).
  3. V. V. Bolotov, V. A. Korotchenko, A. P. Mamontov, et al., “Radiation effects in semiconductors small dose particle illumination,” FTP 14, No. 2, 2257 (1980).
  4. O. Yu. Borkovskaya, N. L. Dmitruk, R. V. Konakova, et al., Preprint No. 6 “Effects of Radiation Regulation in Laminated Structures Based on A3B5 Compounds” (IF AN USSR, Kiev, 1986).
  5. A. P. Mamontov and I. P. Chernov, Small Dose Ionizing Radiation Effect (Energoatomizdat, Moscow, 2001) [in Russian].
  6. V. I. Vovnenko, N. L. Dmitruk, and V. G. Litovchenko, “Radiation Alteration of Deep Centers into Barrier Structures of Gallium Arsenide,” FTP 21, No. 1, 156 (1987).
  7. R. V. Konakova and Yu. A. Tkhorik, “Facility of Radiation Technology in Diode Production,” Elekronnaya Tekhnika. Ser 2. Poluprovodnikovye Pribory, No. 2, 47 (1988).
  8. O. Yu. Borkovskaya, N. L. Dmitruk, V. G. Litovchenko, and O. N. Mischuk, “About Model of Radiation-Stimulated Ordering in Semiconductors A3B5,” FTP 2, No. 23, 207 (1989).
  9. Yu. Yu. Breza, R. V. Konakova, V. G. Lyapin, et al., “About Effect of Interinsic Stresss on Creation Mechanism and Characteristics of Cr-GaAs Barrier Structures,” Poverkhnost, No. 6, 103 (1994).
  10. V. A. Statov, Candidate’s Dissertation in Mathematics and Physics (IFP NANU, Kiev, 1996).
  11. E. F. Venger, I. B. Yermolovich, V. V. Milenin, et al., “Effect of External Radiation, Microwave and Mechanical Stimulation on Lattice Damage of Metallic Crystal,” Voprosy Atomnoy Nauki i Tekhniki. Ser. Fizika Radiatsionnykh Povrezhdeniy I Radiatsionnoye Materialovedeniye, No. 3(75), 60 (1999).
  12. R. V. Konakova and G. S. Korotchenkova, Interphase Interaction and Degradation Mechanisms In Metal-InP and Metal-GaAs Structures (IO IPF NANU, Kiev, 1999) [in Russian].
  13. K. A. Ismaylov, A. B. Kamalov, and V. A. Statov, “Radiation Effects In Gallium Arsenide Surface-Barrier Structures, Occurring Under the Influence of Gamma and Beta Rays,” Voprosy Atomnoy Nauki i Tekhniki. Ser. Fizika Radiatsionnykh Povrezhdeniy I Radiatsionnoye Materialovedeniye, No. 2(79), 63 (2000).
  14. N. S. Boltovets, V. N. Ivanov, R. V. Konakova, et al., “Interphase Interaction and Distinctive Features of Structural Relaxation in TiBx–n–GaAs(InP, GaP, 6H–SiC) Junction,” FTP 38, No. 7, 769 (2004).
  15. D. V. Gromov, G. V. Petrov, V. G. Yelenskii, “Radiation Effects in Microwave Semiconductor Devices Based on Gallium Arsenide,” Zarubezhnaya Radioelektronika, No. 11, 64 (1980).
  16. Y. R. Asvatsaturyan, D. V. Gromov, V. V. Yelesin, et al, “Radiation Effects in GaAs-semiconductor Devices and Integrated Circuits,” Zarubezhnaya Elekronnaya Tekhnika, No. 1, 48 (1988).
  17. A. V. Bobyl, R. V. Konakova, V. K. Kononov, et al., “Interaction of Gallium Arsenide with Ionizing Radiation and Problems of Radiation Resistance of Gallium Arsenide Devices,” Elekronnaya Tekhnika, Ser. 8. Upravleniye Kachestvom, Standartizatsiya, Metrologiya, Ispytaniya, Nos. 3–4, 31 (1992).
  18. S. G. Kiyak, “Modification of Physical Characteristics and Structure of Semiconductor Devices under the Influence of Laser Radiation,” Izv. AN SSSR, Ser. Fizicheskaya 46, No. 6, 1090 (1982).
  19. Z. Yu. Gotra, S. A. Osered’ko, Ya. V. Bobitskii, “Pulsed Laser Annealing of Ion-implanted Semiconductors,” Zarubezhnaya Elekronnaya Tekhnika, No. 6, 3 (1983).
  20. A. P. Vyatkin, V. P. Voronkov, S. M. Kulyeshov, et al., “Physicochemical Interaction in Pulsed Laser Annealed Palladium-Gallium Arsenide Contacts,” Poverkhnost’. Fizika, Khimiya, Mekhanika, No. 8, 111 (1986).
  21. V. P. Voronkov, A. P. Vyatkin, B. V. Ivanov, et al., “Current-Voltage Characteristic of Pulsed Laser Annealed Pd-GaAs Contacts,” FTP 23, No. 3, 652 (1989).
  22. Yu. K. Danileyko, T. N. Lebedeva, A. A. Manenkov, and A. I. Sidorin, “Destruction Mechanisms of Semiconductors under the Influence of IR Laser Radiatin Study,” ZhETF 74, No. 2, 765 (1978).
  23. I. B. Khaybibullin and L. S. Smirnov, “Pulsed Annealing of Semiconductors, Problem Condition and Open Problems,” FTP 19, No. 4, 569 (1985).
  24. V. N. Abakumov, Zh. I. Alferov, Yu. V. Kovalchuk, and E. L. Portnoy, “About Mechanisms of Laser Annealing of Semiconductors,” FTP, No. 12, 2224 (1984).
  25. G. M. Gusakov, T. N. Kondratova, K. S. Kanskii, and A. I. Laryushkin, “Influence of Pulse Laser Illumination on Mobility and GaAs Epitaxial Layers Conductivity Profiles,” FTP 23, No. 10, 1864 (1989).
  26. A. I. Yefimova, P. K. Kashkarov,V. I. Petrov, and V. Yu. Timoshenko, “Laser Induced Lattice Damages in Surface Layers of Materials A3B5,” Poverkhnost’. Fizika, Khimiya, Mekhanika, No. 8, 94 (1990).
  27. V. I. Yemelyanov and P. K. Kashkarov, “Lattice Damages Occurrence in Near-Surface Layers of Semiconductor under the Influence of Pulse Laser Radiation,” Poverkhnost’. Fizika, Khimiya, Mekhanika, No. 2, 77 (1990).
  28. P. K. Kashkarov, “Point Imperfection in Semiconductor Crystal Occurrence,” Sorosovkiy Obrazovatelnyi Zhurnal, No. 1, 105 (1991).
  29. P. K. Kashkarov and V. Yu. Timoshenko, “Lattice Damages Occurrence in Semiconductor Under Laser Annealing,” Poverkhnost’. Fizika, Khimiya, Mekhanika, No. 6, 5 (1995).
  30. A. Yu. Nikiforov and P. K. Skorobagatov, “Basic Physics of Laser Experimental Simulation of Volumetrical Ionizing Damages of Semiconductor Structures, Elements, Microcircuit. Linear Model,” Mikroelektronika 33, 91 (2004).
  31. K. K. Dzhamanbalin, A. G. Dmitriev, E. N. Sokol-Nomokonov, and Yu. I. Ukhanov, “InP, GaAs, InAs Surface Morphology Modification Under the Influence of Laser Radiation of Threshold Flux Density,” Fizika i Khimiya. Obrabotki Materialov, No. 2, 20 (1990).
  32. A. B. Kamalov, “Radiation Effects in Metal-GaAs Barrier Contacts,” Peterburgskii Zhurnal Radioelektroniki, No. 4(45), 40 (2005).
  33. R. V. Konakova, V. G. Lyapin, V. V. Milenin, et al., “Physico-Chemical Processes in the GaAs Schottky Diodes Stimulated by the Gyrotron Radiation, Functional Materials 2, No. 4, 47 (1995).
  34. D. E. Abdurahimov, V. L. Vereschagin, V. P. Kalinushkin, et al., “Influence of Microwave Fields on Lifetime of Current Carriers in Silicon,” Kratkiye Soobscheniya po Fizike, No. 6, 27 (1991).
  35. A. V. Rzhanov, N. N. Gerasimenko, A. V. Vasiliev, and V. I. Obodnikov, “Microwave Heating as Semiconductors Thermotreatment Method,” Pisma v ZhTF 7, No. 20, 1221 (1981).
  36. E. V. Vinnik, V. I. Guroshev, A. V. Prokhorovich, and M. V. Shevelev, “Using High-Power Microwave Radiation for Fast Gallium Arsenide Annealing,” Optoelekronika i Poluprovodnikovaya Tekhnika, No. 15, 48 (1989).
  37. A. E. Belyaev, A. A. Belyaev, E. F. Venger, et al., “Influence of Microwave Radiation on Structural, Physical-Chemical, Electrophysical Characteristics of a Number of Semiconductor Matherials and Devices,” in Proceedings of 6th International Conference ‘Microwave Engineering and Telecommunication Technology’, Crimea, Ukraine, September 16–19, Sevastopol (Veber, Sevastopol, 1996), pp. 71–79.
  38. A. A. Belyaev, A. E. Belyaev, I. V. Yermolovich, et al., “Influence of Microwave Treatment on Electrophysical Characteristics of Technically Substantial Semiconductors and Surface-Barrier Structures,” ZhTF 68, No. 12, 49 (1998).
  39. I. B. Yermolovich, V. V. Milenin, R. V. Konakova, and G. E. Chaika, “Influence of Radiation, Microwave and Mechanical Stimulation on Lattice Defects Occurrence in Nonmetallic Crystals,” Voprosy Atomnoy Nauki i Tekhniki. Ser. Fizika Radiatsionnykh Povrezhdeniy i Radiatsionnoye Materialovedeniye, Nos. 1(67)–2(68), 37 (1998).
  40. N. S. Boltovets, A. B. Kamalov, E. Yu. Kolyadina, et al., “Intrinsic Stress in Thin-Film Gallium Arsenide Device Structures Relaxation, Stimulated by Microwave Radiation, in Proceedings of 12th International Symposium ‘Thin Films In Electronics,’ Kharkov, Ukraine (Ukraine, 2001), pp. 313–316.
  41. N. S. Boltovets, A. B. Kamalov, R. V. Konakova, et al., “Effects in Semiconductors, Stimulated by High-Power Electromagnetic Radiation,” in Proceedings of 4th International Conference ‘Interaction of Radiation and Solids’, Minsk, Byelorussia (Minsk, 2001), pp. 114–116.
  42. N. S. Boltovets, A. B. Kamalov, E. Yu. Kolyadina, et al., “Intrinsic Stress in Gallium Arsenide Device Structures Relaxation, Stimulated by Microwave Treatment,” Pisma v ZhTF 28, No. 4, 57 (2002).
  43. A. B. Kamalov, E. Yu. Kolyadina, R. V. Konakova, et al., “Relaxation of Interinsic Stresses in Au–Ti(TiBx)–n–n+–GaAs Surface–Barrier Structures Induced by Microwave Radiation,” in Abstracts of 8th International Conference on the Formation of Semiconductor Interface. 8–10 June, Sapporo, Japan (Japan, 2001), P. 118.
  44. S. K. Abdizhaliev, K. A. Ismailov, A. B. Kamalov, and Ya. Ya. Kudrik, “Effect of Microwave Treatment on the Parameters of Au–TiBx–GaAs(SiC–6H) Surface–Barrier Structures,” Semiconductor Physics, Quantum Electronics and Optoelectronics 6, No. 2, 202 (2003).

Downloads

Published

2008-02-04

Issue

Vol. 51 No. 2 (2008)

Section

Research Articles