Simulation of temperature characteristics of silicon sensors operating at low injection levels
DOI:
https://doi.org/10.3103/S0735272705060099Abstract
The thermal sensitivity of silicon bipolar structures is investigated as dependence of the nonequilibrium contact voltage of p–n-junction on temperature. A model equation is derived to describe temperature characteristics of silicon sensors with p–n-junctions. Experimental dependencies of the voltage across the p–n-junction on temperature are compared with similar dependencies obtained in the model suggested.References
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