Importance of the “secondary breakdown energy” parameter in high–power switching transistors

N. G. Vorobyov

doi:10.3103/S0735272704030070

Authors

N. G. Vorobyov “Polyot” Scientific-and-Production Enterprise, Russian Federation

DOI:

https://doi.org/10.3103/S0735272704030070

Abstract

The necessity in estimating the secondary breakdown energy of switching–type transistors is substantiated. The issues of improvement of reliability of high–power switching devices in bipolar transistors are considered.

References

JOVANOVIC, M.M.; LEE, F.C.; CHEN, D.Y. "Nondestructive characterization of RBSOA of high-power bipolar transistors," IEEE Trans. Aerosp. Electron. Syst., v.AES-22, n.2, Р.138-145, 1986. DOI: https://doi.org/10.1109/TAES.1986.310748.

KOLESNIKOV, V.G.; NIKISHIN, V.I.; SYNOROV, V.F.; ET AL. Silicon Planar Transistors [in Russian, ed. by Ya. A. Fedotov]. Moscow: Sov. Radio, 1973.