Parameter identification of the electric model of a resonant-tunnel diode with the aid of EC-RTS-NANODEV program complex

Authors

  • I. I. Abramov Belarusian State University of Informatics and Radioelectronics, Belarus
  • A. V. Korolyov Belarusian State University of Informatics and Radioelectronics, Belarus
  • I. A. Goncharenko Belarusian State University of Informatics and Radioelectronics, Belarus

DOI:

https://doi.org/10.3103/S0735272703010072

Abstract

A new complex of computer programs for simulation of resonant-tunnel structures at the electric model level is described. The authors suggest a method for identification of model parameters based on experimental data and on results of numerical simulation with the aid of the complex just developed. An example of the program application to modeling the resonant-tunnel diodes is presented.

References

AVERIN, D.V.; LIKHAREV, K.K. "Possible applications of the single charge tunneling," in: GRABERT, H.; DEVORET, M.H. (eds.). Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures. New York: Plenum, NATO ASI Series B: Physics, v.294, Ch.9, p.311-332, 1992.

NOVIK, E.G.; SHEREMET, I.V.; IVASHKEVICH, S.S.; ABRAMOV, I.I. "Nanoelectronic device simulator NANODEV," in: Physics, Chemistry and Application of Nanostructures. Singapore: World Scientific, 1997, p.317-321.

ABRAMOV, I.I.; NOVIK, Y.G. Numerical Simulation of Metal Single-Electron Transistors [in Russian]. Minsk: Bestprint, 2000.

ABRAMOV, I.I.; GONCHARENKO, I.A.; NOVIK, Y.G. "Chislennoe modelirovanie odnoelektronnykh tranzistorov," Izv. VUZ. Elektronika, n.2, p.87-94, 2000.

ABRAMOV, I.I.; NOVIK, Y.G. "Dvumernaia chislennaia model odnoelektronnogo tranzistora," Mikroelektronika, v.29, n.3, p.197-201, 2000.

ABRAMOV, I.I.; BERASHEVICH, Yu.A.; DANILYUK, A.D. "Potential electrical characteristics of interference transistors made from various materials," Tech. Phys., v.44, n.11, p.1384-1385, 1999. DOI: https://doi.org/10.1134/1.1259529.

ABRAMOV, I.I.; BERASHEVICH, Yu.A.; SHEREMET, I.V.; YAKUBOVSKIJ, I.A. "Program complex for simulation of resonant-tunnel structures," Izv. VUZ. Radioelektronika, v.42, n.2, p.46-50, 1999.

ABRAMOV, I.I.; DANILYUK, A.L.; KOROLYOV, A.V. "Nelineinaia elektricheskaia model rezonansno-tunnelnogo dioda," Izv. VUZ. Radioelektronika, v.43, n.3, p.59-63, 2000.

ABRAMOV, I.I.; DANILYUK, A.L.; KOROLYOV, A.V. "Elektricheskaia model dvukhbarernykh nanostruktur, funtcioniruiushchikh na printcipakh samoorganizatcii," Izvestiya Byelorusskoy Inzhenernoy Akademii, n.1/2, p.119-121, 1999.

Downloads

Published

2003-01-07

Issue

Vol. 46 No. 1 (2003)

Section

Research Articles