The impact of energy and delay angle of injected carriers on energy conversion efficiency in a Gunn diode with an intricate cathode
DOI:
https://doi.org/10.3103/S0735272703010047Abstract
The paper is devoted to numerical investigation of the influence of the energy and delay angle of injected carriers on the energy conversion efficiency at the fundamental mode in an n-GaAs Gunn diode with an intricate cathode. An increase in the energy of the carriers injected into the diode’s active region (for the delay angles within a range corresponding to positive values of the diode efficiency) is shown to lead to a shift of this range towards larger angles of lag. A new structure of the Gunn diode is suggested, which involves special cathode contacts consisting of alternating quasiisland ohmic contacts and control electrode domains.References
COUCH, N.R.; BETON, P.H.; KELLY, M.J.; KERR, T.M.; KNIGHT, D.J.; ONDRIA, J. "The use of linearly graded composition AlGaAs injectors for intervalley transfer in GaAs: theory and experiment," Solid-State Electronics, v.31, n.3-4, p.613-616, 1988. DOI: https://doi.org/10.1016/0038-1101(88)90353-X.
KANEVSKII, V.I.; KOZYREV, Y.N.; SUKHINA, Y.Y.; POBOKIN, D.Y. "Fizicheskie protcessy v diodakh Ganna so slozhnym katodom (modelirovanie metodom Monte-Karlo)," Radiotekhnika i Elektronika, v.40, n.1, p.147-153, 1995.
KANEVSKII, V.I.; CHAIKA, V.Y. "Modelirovanie fizicheskikh protcessov v diodakh Ganna s ostrovkovymi inzhektorami goriachikh elektronov," Izv. VUZ. Radioelektronika, v.43, n.8, p.73-80, 2000.
JACOBONI, C.; REGGIANI, L. "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Modern Phys., v.55, n.3, p.645-705, 1983. DOI: https://doi.org/10.1103/RevModPhys.55.645.
LITTLEJOHN, M.A.; HAUSER, J.R.; GLISSON, T.H. " Velocity-field characteristics of GaAs with Γc6-Lc6-Xc6 conduction-band ordering," J. Appl. Phys., v.48, n.11, p.4587-4590, 1977. DOI: https://doi.org/10.1063/1.323516.
RUCH, J.G.; FAWCETT, W. "Temperature dependence of the transport properties of gallium arsenide determined by a Monte Carlo method," J. Appl. Phys., v.41, n.9, p.3843-3849, 1970. DOI: https://doi.org/10.1063/1.1659516.