Transient model for modern microelectronic devices applicable to EKV PMOS model
Keywords:spline collocation method, quasi static approach, symmetrical telescopic modification, normalized channel charge densities, EKV PMOS model
Massive advances in microelectronic manufacturing technology with an exponential growth of their complexity and speed are needed to ensure a continuous development of novel techniques, structures, devices, circuits and systems. This paper is intended for the introduction of a new PMOS transient model for modern microelectronic devices that provides a fast transient response. Such suggested model expresses the transient terminal currents as polynomial functions of the normalized channel charge densities at the channel bounds with the assistance of a modified version of the cubic spline collocation methodology in symmetrical telescopic fashion. Additionally, the optimum number of segments, which is suitable for the new version of the cubic spline collocation algorithm, is investigated. Moreover, the normalized channel charge density at collocation points is modeled in terms of its values at the channel bounds through the quasi-static approach. Furthermore, by means of introducing an inverse function for the normalized overdrive channel voltage, the transient terminal currents are formulated as a function of the terminal voltages. In comparison with usual cubic spline collocation structure, the novel model has much better accuracy in its application to EKV structure. The developed model has been applied to the standard 0.15 mm technology and validated by MATLAB R2014a. The obtained results demonstrate that it gives a very high degree of relative accuracy, on average of 99%, for the total time and exhibits absolute error of less than 5% of the maximum value, in its worst case.
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