Open Access Open Access  Restricted Access Subscription Access

Investigating the dynamic properties of an MOS-transistor structure

N. P. Likhobabin, L. F. Politanskii, P. P. Vatamanyuk


The literature provides practically no information on the operation of MOS-transistor switches in the low-temperature range. The purpose of the present work was to study the dynamic parameters in the temperature range from 77 to 400 K. The investigations were carried out on horizontal high-voltage MOS structures having a drift region and a polysilicon gate, which had been fabricated on KDB80 plates.

Full Text:



BACHURIN, V.V.; D’YAKONOV, V.P.; LEVIN, A.V.; ET AL. Powerful high-voltage MOS switching transistors for transformerless power supplies. Elektrichestvo, no. 3, pp. 56-58, 1986.

BLICHER, A. Field-Effect and Bipolar Power Transistor Physics. New York, 1981.



  • There are currently no refbacks.

© Radioelectronics and Communications Systems, 2004–2018
When you copy an active link to the material is required
ISSN 1934-8061 (Online), ISSN 0735-2727 (Print)
tel./fax +38044 204-82-31, 204-90-41