Method of infrared radiation detection by uncooled photodetector

Authors

  • I. A. Ivanchenko Odessa National University, Ukraine
  • L. M. Budiyanskaya Odessa National University, Ukraine
  • V. I. Santonii Odessa National University, Ukraine
  • V. A. Smyntyna Odessa National University, Ukraine

DOI:

https://doi.org/10.3103/S0735272717080052

Keywords:

IR-radiation, infrared radiation, photodetector, heterojunction, equivalent circuit, thermal background, measurement circuit

Abstract

The article describes an optical method for detecting radiation in the far infrared region of the spectrum against the thermal noise background with an uncooled photodetector (PD) that is relevant for the field of indicator sensors. The basis of the PD is an abrupt anisotype heterojunction, made according to the “optical window–absorber” connection. The article considers the mechanism of the appearance of photocurrent components in a heterojunction during the absorption of long-wave radiation and their ratio. A measurement of the photocurrent in PD by incorporating a heterojunction into a bridge circuit is proposed. An analytical description of the dependence of the loop currents on the elements of the equivalent heterojunction circuit and the bridge measurement circuit is given. It is established that the functional dependences of the photocurrent components through the structural elements of the heterojunction are opposite in sign and intersect at the point of equality of their values. The method makes it possible to divide the currents in the heterojunction layers, calculate or set the current reference value by adjusting the measuring circuit and to provide the measurement of the photocurrent that is less than the thermal background in magnitude. An example of the practical implementation of the method in a heterojunction PD with the structure n(CdSe)–p(Pb1–xSnxSe) is presented.

References

SIZOV, F.F. Photoelectronics for Vision Systems in “Invisible” Regions of the Spectrum [in Russian]. Kyiv: Akademperyodyka, 2008.

SIZOV, F.F. IR photoelectronics: photonic or thermal detectors? Prospects. Sensor Electronics and Microsystem Technologies, v.12, n.1, p.26-52, 2015. URL: http://semst.onu.edu.ua/article/view/104447.

ROGALSKI, A. Far-infrared semiconductor detectors and focal plane arrays, in: THz and Security Applications [ed. by K. Corsi, F. Sizov]. Springer, 2014, p.25-52. DOI: http://doi.org/10.1007/978-94-017-8828-1.

GILMORE, A.S. High-definition infrared FPAs. Technology Today, n.1, p.4, 2008. URL: http://www.raytheon.com/news/technology_today/archive/2008_issue1.pdf.

SALKOV, E.A. The Fundamentals of Semiconductor Photoelectronics [in Russian]. Kyiv: Naukova Dumka, 1988.

SERDYUK, V.V. Physics of Solar Cells [in Russian]. Moscow: Logos, 1994.

IVANCHENKO, I.O.; BUDIYANSKA, L.M.; SMYNTYNA, V.A.; SANTONIY, V.I. Method for detection of infrared radiation. UA Patent No. 106203 G01N 21/47, 21/55, 25 Apr. 2016. URL: http://uapatents.com/9-106203-sposib-viyavlennya-infrachervonogo-viprominyuvannya.html.

BYCHKOV, Y.A.; ZOLOTNITSKY, V.A.; CHERNYSHOV, E.P. (eds.), Theoretical Bases of Electrical Engineering. Handbook of the Theory of Electrical Circuits [in Russian]. St. Petersburg: Piter, 2008.

BRONSTEIN, I.N.; SEMENDYAEV, K.A. Handbook of Mathematics for Engineers and Students of Technical Colleges [in Russian]. Moscow: Nauka, 1986.

LEPIKH, Y.I.; IVANCHENKO, I.A.; BUDIYANSKAYA, L.M. Uncooled p(Pb1–xSnxSe)–n(CdSe) heterostructure-based photodetector for the far infrared spectral range. Semiconductor Physics, Quantum Electronics & Optoelectronics, v.17, n.4, p.408, 2014.

Published

2017-08-25

Issue

Section

Research Articles