Electrothermal models of structural elements of radioelectronic device

B. M. Uvarov; Yu. F. Zin'kovskii

doi:10.3103/S0735272715110047

Authors

B. M. Uvarov National Technical University of Ukraine "Kyiv Polytechnic Institute", Ukraine https://orcid.org/0000-0003-3375-6181
Yu. F. Zin'kovskii National Technical University of Ukraine "Kyiv Polytechnic Institute", Ukraine

DOI:

https://doi.org/10.3103/S0735272715110047

Keywords:

electronic device, cell, microassembly, model of two-pole network, thermal model, temperature of elements

Abstract

The paper considers basic features of thermal processes in structural modules of radioelectronic device (cell, microassembly) and elements of their electronic structure. The efficiency factors of modules and the indicators of energy performance of resistors, capacitors, and inductors were analyzed on the basis of models of equivalent two-pole networks. The mathematical model of microassembly thermal field was proposed and the analytical equation for determining temperatures of all its elements was derived.

References

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LYKOV, A.V. Heat Mass Exchange (Reference Book), 2nd ed. Moscow: Energiya, 1978 [in Russian].

Standard of Ukraine DSTU 2992-96. Electronic Devices. Reliability Calculation Methods (1996) [in Ukrainian].

PRYTKOV, S.F.; GORBACHEVA, V.M.; MARTYNOVA, M.N.; PETROV, G.A. Reliability of Electronic Components / Reference Book. MO RF & NII Elektronstandart, 2004 [in Russian].