Electrothermal models of structural elements of radioelectronic device
The paper considers basic features of thermal processes in structural modules of radioelectronic device (cell, microassembly) and elements of their electronic structure. The efficiency factors of modules and the indicators of energy performance of resistors, capacitors, and inductors were analyzed on the basis of models of equivalent two-pole networks. The mathematical model of microassembly thermal field was proposed and the analytical equation for determining temperatures of all its elements was derived.
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