DOI: https://doi.org/10.3103/S073527271504007X
Open Access Open Access  Restricted Access Subscription Access
Structures based on wafers of grades SAG-2BK and SAGIS with epitaxial layers formed on semi-insulating gallium arsenide substrate

Peculiarities of stable oscillations of high amplitude current occuring in long high-impedance planar-epitaxial gallium-arsenide-based structures

Alexandr I. Mikhailov, Anton V. Mitin, Ilya O. Kozhevnikov

Abstract


The results of experimental investigation for determining the effect of different factors (distance between contacts, type of contacts, and the grade of virgin wafers) on the origination of stable oscillations of high amplitude current in long planar-epitaxial structures based on high-impedance semi-isolating n-type gallium arsenide have been presented. It was found out that the distance between the anode and cathode contacts was a key factor determining the emergence of stable oscillations of high amplitude current in such structures.


Keywords


semi-insulating gallium arsenide; recombination current instability; functional electronics

Full Text:

PDF

References


GULYAEV, Y.V. Acoustoelectronics (historical review). Phys. Usp., 2005, v.48, n.8, p.847, DOI: http://dx.doi.org/10.1070/PU2005v048n08ABEH002840.

SHCHUKA, A.A. Functional Electronics. Uspekhi Sovremennoi Radioelektroniki. Zarubezhnaya Radioelektronika, 2004, n.5-6, p.149-168.

LEVINSHTEIN, M.E.; POZHELA, Y.K.; SHUR, M.S. The Gunn Effect. Moscow: Sov. Radio, 1975 [in Russian].

SHUR, M. Physics of Semiconductor Devices. Prentice Hall, 1990.

BONCH-BRUEVICH, V.L.; ZVYAGIN, I.P.; MIRONOV, A.G. Domain Electric Instability in Semiconductors. Moscow: Nauka, 1972 [in Russian].

MILNES, A.G. Deep Impurities in Semiconductors. New York: Wiley-Interscience, 1973.

NEUMANN, A. Slow domains in semi-insulating GaAs. J. Appl. Phys., 2001, v.90, n.1, p.1-26, DOI: http://dx.doi.org/10.1063/1.1377023.

MURAVSKII, B.S.; CHERNYI, V.N.; YAMANOV, I.L.; ET AL. Nonequilibrium electronic processes in transistor structures with tunnel-transparent oxide. Mikroelektronika, 1989, v.18, n.4, p.304-309.

KIYAMA, M.; TATSUMI, M.; YAMADA, M. Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs. Appl. Phys. Lett., 2005, v.86, n.1, p.012102-012102-3, DOI: http://dx.doi.org/10.1063/1.1844040.

DE OLIVEIRA, A.G.; RIBEIRO, G.M.; ALBUQUERQUE, H.A.; MOREIRA, M.V.B.; RODRIGUES, W.N.; GONZALEZ, J.C.; RUBINGER, R.M. Blockade of free carriers by hopping carriers leading to the low-frequency current oscillations in semi-insulating GaAs. Phys. Rev. B, 2006, v.74, n.3, p.035204, DOI: http://dx.doi.org/10.1103/PhysRevB.74.035204.

MURAVSKII, B.S.; GRIGORYAN, L.R.; RUBTSOV, G.P.; CHERNYI, V.N. Prospects of using the recombination instability of current in functional electronics. Proc. of VII Vseros. Nauch.-Tekhn. Conf. on Pressing Problems of Solid-State Electronics and Microelectronics, 2000, Taganrog, Russia. Taganrog, 2000.

KIRYUKHIN, A.D.; ZUEV, A.V.; ZUEV, V.V.; GRIGOR’EV, V.V. Current oscillations in gold-compensated silicon following its preliminary high-temperature treatment. Col. of Studies: Scientific Session of MIFI-2008. Moscow: MIFI, 2008, v.2, p.193-196.

MIKHAILOV, A.I.; MITIN, A.V. Experimental investigation of current oscillations spectrum in long high-resistivity planar-epitaxial gallium arsenide structures under light action. Fizika Volnovykh Protsessov i Radiotekhnicheskie Sistemy, 2011, v.14, n.4, p.87-91, http://elibrary.ru/item.asp?id=17272416.







© Radioelectronics and Communications Systems, 2004–2020
When you copy an active link to the material is required
ISSN 1934-8061 (Online), ISSN 0735-2727 (Print)
tel./fax +38044 204-82-31, 204-90-41