Comparison of obtain of phase photo-response images in case of scanning of semiconductor heterostructures in p-n junction perpendicular plane
It is carried out comparative analysis of the methods of research of photo-electric response on example of scanning of semiconductor structure of laser diode on a basis of AlGaInP in direction, which is perpendicular to p-n junction plane. We discovered and theoretically proved a difference in results obtained by means of phase and differential-phase research methods. It is shown differential-phase research method allows to obtain addition information about optical properties which are not present in results, obtained by phase method.
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