Quasi-planar K-band push-push low phase noise oscillator stabilized by cavity resonator

Ivan Tsvelykh

doi:10.3103/S0735272714090052

Authors

Ivan Tsvelykh National Technical University of Ukraine "Kyiv Polytechnic Institute", Ukraine https://orcid.org/0000-0002-1430-5302

DOI:

https://doi.org/10.3103/S0735272714090052

Keywords:

low phase noise oscillator, K-band push-push oscillator, oscillator based on a cavity resonator, oscillator based on silicon-germanium bipolar transistors

Abstract

The results of developing a K-band (24 GHz) push-push low phase noise transistor oscillator have been presented. This oscillator is stabilized by a rectangular resonant metallic cavity. The power level of output signal is –9.5 dBm, the fundamental harmonic suppression is 21 dB. Single sideband (SSB) phase noise spectral density of –98 dBc/Hz at 10 kHz and –128 dBc/Hz at 100 kHz offset from the carrier frequency is at the level of dielectric resonator oscillators (DRO) scaled to the same frequency. The oscillator features a compact size, low cost quazi-planar design and it is built using commercially available off the shelf parts.

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