Investigation of the charge carrier concentration and electric field distribution in gallium arsenide Gunn diode

Dmitry A. Usanov; Sergey S. Gorbatov; Vladimir Yu. Kvasko

doi:10.3103/S0735272713110034

Authors

Dmitry A. Usanov Saratov State University, Russian Federation
Sergey S. Gorbatov Saratov State University, Russian Federation
Vladimir Yu. Kvasko Saratov State University, Russian Federation

DOI:

https://doi.org/10.3103/S0735272713110034

Keywords:

gallium arsenide Gunn diode, near-field microwave microscope, stationary domain, Poisson equation, contact prove, double electric layer, electric field intensity

Abstract

Numerical calculation of the stationary distribution of electric field and charge carrier concentration in Gunn diode has been performed for the one-dimensional case. In addition, experimental investigations of the specified characteristics were also carried out by using a near-field microwave microscope. Taking into account the dependence of the majority carrier diffusion coefficient on the electric field intensity was shown to be of crucial importance in describing the processes occurring in Gunn diodes. The numerical results were in good agreement with the results of conducted experiment.

References

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