DOI: https://doi.org/10.3103/S0735272710070034
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Procedure for building a MOS transistor high frequency small-signal model

S. Borisov, Alexander S. Korotkov

Abstract


This paper examines a procedure for building a MOS transistor small-signal equivalent circuit for the high frequency range. Procedures are proposed for determining the ac and dc parameters. The simulation results and experimental data are also presented.


Keywords


MOSFET; RF IC design; small-signal MOSFET modeling; BSIM; parameter extraction

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References


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BSIM3v3 Manual (UC Berkley, 2005), Ch. 4, pp. 5–23.

W. Y. Choi, H. Kim, B. Lee, et al., “Park Stable Threshold Voltage Extraction Using Tikhonov’s Regularization Theory,” IEEE Trans. Electron Devices 51, No. 11, 1833 (2004).







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