Open Access Open Access  Restricted Access Subscription Access

Procedure for building a MOS transistor high frequency small-signal model

S. Borisov, Alexander S. Korotkov


This paper examines a procedure for building a MOS transistor small-signal equivalent circuit for the high frequency range. Procedures are proposed for determining the ac and dc parameters. The simulation results and experimental data are also presented.


MOSFET; RF IC design; small-signal MOSFET modeling; BSIM; parameter extraction

Full Text:



Y. Cheng, M. J. Deen, and C. Chen, “MOSFET Modeling for RF IC Design,” IEEE Trans. Electron Devices 52, No. 7, 1286 (2005).

C. Enz, “An MOS Transistor Model for RF IC Design Valid in All Regions of Operation,” IEEE Trans. Microwave Theory Tech. 50, No. 1, 342 (2002).

C. Enz and Y. Cheng, “MOS Transistor Modeling for RF IC Design,” IEEE J. Solid-State Circuits 35, No. 2, 186 (2000).

Y. Cheng, “High Frequency Small–Signal AC and Noise Modeling of MOSFET for RF IC Design,” IEEE Trans. Electron Devices 49, No. 3, 400 (2002).

BSIM3v3 Manual (UC Berkley, 2005), Ch. 4, pp. 5–23.

W. Y. Choi, H. Kim, B. Lee, et al., “Park Stable Threshold Voltage Extraction Using Tikhonov’s Regularization Theory,” IEEE Trans. Electron Devices 51, No. 11, 1833 (2004).

© Radioelectronics and Communications Systems, 2004–2019
When you copy an active link to the material is required
ISSN 1934-8061 (Online), ISSN 0735-2727 (Print)
tel./fax +38044 204-82-31, 204-90-41