Integrated silicon p–i–n structures with highly doped p++, n++ regions for modulation in terahertz frequency band
DOI:
https://doi.org/10.3103/S073527271006004XKeywords:
silicon integrated p–i–n-structure, highly doped region, terahertz band, modulationAbstract
Modulators of terahertz range on the base of silicon integrated p–i–n-structures are investigated theoretically. The generalization of the Fletcher boundary conditions at the injecting contacts has been put forward for the case of highly doped p++, n++ regions, where both forbidden gap narrowing and dependence of coefficients of diffusion on doping concentration are taken into account. The problem of double injection into i-region has been simulated in a two-dimensional case. The investigations of modulation properties of integrated p–i–n-structures in the terahertz range have demonstrated a possibility to use these structures up to the frequencies 8 THz.
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