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Class E microwave amplifier built on a SiC transistor with high on-state resistance

Vladimir G. Krizhanovski, D. G. Makarov, A. A. Kistchinsky


Theoretical and experimental investigations of a wide-band microstrip-design class E amplifier on a SiC MESFET have been performed with due regard for the transistor on-state resistance. The efficiency versus passband relationships obtained by experiments are in good agreement with the results of theoretical calculation.


class E amplifier; SiC transistor; efficiency on state resistance

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