Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs
Using method of Auger electronic spectroscopy, we experimentally research an influence of microwave treatment on efficient thickness modification in transition layer of Mo–GaAs contacts. It is shown that parameters of Schottky barriers (barriers height jВ and ideality factor n) are correlated with efficient thickness of transition layer after microwave treatment.
A. B. Netushil, B. Ya. Zhukhovitskiy, N. V. Kudin, and E. P. Parini, Diathermic Heating of Dielectrics and Semiconductors (Gosenergoatomizdat, Moscow, 1959) [in Russian].
Yu. K. Kovneristii, I. Yu. Lazareva, and A. A. Ravayev, SHF Irradiation Absorbents (Nauka, Moscow, 1982) [in Russian].
P. A. Sirovets, Industrial Use of Microwave Radiation (UkrNIINTI Gosplana USSR, Kiev, 1990) [in Russian].
J. B. Horton, “Selected Technology Summaries for Microwave Theory and Techniques–1988,” IEEE Trans. Microwave Theory Tech. 37, No. 6, 1040 (1989).
A. V. Rzhanov, N. N. Gerasimenko, A. V. Vasiliev, and V. I. Obodnikov, “Microwave Heating as a Semiconductors Treatment Method,” Pisma v ZhTF 7, No. 20, 1221 (1981).
A. A. Belyaev, A. E. Belyaev, I. V. Yermolovich, et al., “An Influence of Microwave Treatment On Electrophysical Characteristics of Technically Substantial Semiconductors and Surface-Barrier Structures,” ZhTF 68, No. 12, 49 (1998).
N. S. Boltovets, A. B. Kamalov, Ye. Yu. Kolyadina, et al., “Rengevich, Internal Stress In Gallium Arsenide Device Structures Relaxation, Stimulated By Microwave Treatment,” Pisma v ZTF 28, No 4, 57 (2002).
V. A. Statov, Candidate’s Dissertation in Mathematics and Physics (IFP NANU, Kiev, 1996).
Yu. Breza, R. V. Konakova, V. G. Lyapin, et al., “About Influence of Internal Stresses on Mechanism of Shaping and Parameters of Barrier Structures Cr–GaAs,” Poverkhnost’, No. 6, 103 (1994).
R. V. Konakova, G. S. Korotchenkov, Interfacial Interaction and Degradation Mechanisms in Structures Metal–InP and Metal–GaAs (Kiev, 1999) [in Russian].
V. I. Strikha and Ye. V. Buzaneva, Basic Principles of Reliability of Metal-Semiconductor Contacts in Integral Electronics (Radio i Svyaz’, Moscow, 1987).
S. M. Sze, Physics of Semiconductor Devices (John Wiley&Sons Inc., New York, 1969; Mir, Moscow, 1984).