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Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs

A. B. Kamalov


Using method of Auger electronic spectroscopy, we experimentally research an influence of microwave treatment on efficient thickness modification in transition layer of Mo–GaAs contacts. It is shown that parameters of Schottky barriers (barriers height jВ and ideality factor n) are correlated with efficient thickness of transition layer after microwave treatment.

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