Modeling of avalanche cascade multiplier of primary photoelectrons in the reversely biased pn–i–pn structure

Authors

  • Konstantin A. Lukin Usikov Institute of Radiophysics and Electronics of the National Academy of Sciences of Ukraine, Ukraine
  • Pavlo P. Maksymov Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine, Ukraine

DOI:

https://doi.org/10.3103/S0735272709050021

Abstract

Modeling of avalanche cascade multiplier of primary photoelectrons in the reversely-biased pn–i–pn structure with positive feedback with respect to the drift current between p–n junctions is performed. System of equations for a diffuse-drift model (DDM) of reversely-biased p–n junctions with impact ionization is considered to be the object of investigation. The main characteristics of the photomultiplier on the basis of pn–i–pn structures, i.e. gain, operating speed and noise of avalanche multiplication, are calculated and compared with those of avalanche photodiode (APD).

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Published

2009-05-02

Issue

Section

Research Articles