Analysis of nonlinear effects and calculation of EMC characteristics of SHF amplifier based on heterojunction bipolar transistor


  • L. I. Averina Voronezh State University, Russian Federation
  • Anatoly M. Bobreshov Voronezh State University, Russian Federation
  • A. V. Hripushin Voronezh State University, Russian Federation



Analysis of nonlinear properties of amplifier, based on heterojunction bipolar transistor, under the influence of intensive interferences at the amplifier input was carried out with Walter’s series method. It is shown that nonlinearity level and character depend on mutual compensation of harmonics, which are generated into base and collector circuits, and it is also dependent on correlation betweenTaylorexpansion coefficients of nonlinear elements of equivalent circuit near operating point and transistor input impedance.


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