Optical FET output characteristics research in light-activated mode

Authors

  • Dilbara M. Yodgorova Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan

DOI:

https://doi.org/10.3103/S0735272708100087

Abstract

This paper deals with researches of output characteristics of a field-controlled phototransistor with light excitation in a light-activated mode. Optical signal transformation mechanisms in a channel are determined, considering processes in a drain-gate junction. Criteria of base region effective modulation are specified. Obtained results can be used in design of new generation transistors.

References

F. Capasso, T. P. Pearsall, M. A. Pollack, et al., Lightwave Communications Technology: Part D. Photodetectors (Academic Press, Orlando, 1985; Mir, Moscow, 1988).

A. V. Karimov and Sh. N. Bakhronov, Patent UZ IAP 0267, Byull. Izobret., No. 2 2005).

A. V. Karimov and D. M. Yodgorova, Physical Effects in Gallium-Arsenide Structures with Multilayers Quasiisoperiodic Junction (FAN, Tashkent, 2005) [in Russian].

P. M. Karageorgiy-Alkalayev, A. V. Karimov, and M. Mirzabayev, “Speciality of Photo-Sensitivity of Gallium-Arsenide Structures of FET Type,” Izv. AN UzSSR, Ser. Fiz.-Mat. Nauk, No. 2, 44 (1979).

P. M. Karageorgiy-Alkalayev and A. Yu. Lejderman, “Semiconductors Structures with Sublinear Volt-Ampere Characteristics Sensitivity to External Influence,” DAN, No. 10, 23 (1978).

A. V. Karimov, Multifunctional Thin Junction Gallium Arsenide Structures (FAN, Tashkent, 1992) [in Russian].

L. S. Berman, Basic Physical Principles of Varicaps (Nauka, Leningrad, 1968) [in Russian].

Published

2008-10-08

Issue

Section

Research Articles