Open Access Open Access  Restricted Access Subscription Access

Optical FET output characteristics research in light-activated mode

Dilbara M. Yodgorova


This paper deals with researches of output characteristics of a field-controlled phototransistor with light excitation in a light-activated mode. Optical signal transformation mechanisms in a channel are determined, considering processes in a drain-gate junction. Criteria of base region effective modulation are specified. Obtained results can be used in design of new generation transistors.

Full Text:



F. Capasso, T. P. Pearsall, M. A. Pollack, et al., Lightwave Communications Technology: Part D. Photodetectors (Academic Press, Orlando, 1985; Mir, Moscow, 1988).

A. V. Karimov and Sh. N. Bakhronov, Patent UZ IAP 0267, Byull. Izobret., No. 2 2005).

A. V. Karimov and D. M. Yodgorova, Physical Effects in Gallium-Arsenide Structures with Multilayers Quasiisoperiodic Junction (FAN, Tashkent, 2005) [in Russian].

P. M. Karageorgiy-Alkalayev, A. V. Karimov, and M. Mirzabayev, “Speciality of Photo-Sensitivity of Gallium-Arsenide Structures of FET Type,” Izv. AN UzSSR, Ser. Fiz.-Mat. Nauk, No. 2, 44 (1979).

P. M. Karageorgiy-Alkalayev and A. Yu. Lejderman, “Semiconductors Structures with Sublinear Volt-Ampere Characteristics Sensitivity to External Influence,” DAN, No. 10, 23 (1978).

A. V. Karimov, Multifunctional Thin Junction Gallium Arsenide Structures (FAN, Tashkent, 1992) [in Russian].

L. S. Berman, Basic Physical Principles of Varicaps (Nauka, Leningrad, 1968) [in Russian].

© Radioelectronics and Communications Systems, 2004–2020
When you copy an active link to the material is required
ISSN 1934-8061 (Online), ISSN 0735-2727 (Print)
tel./fax +38044 204-82-31, 204-90-41