Specialities of optical FET with tin-doped junction channel
This paper deals with researches of phototransistor based on gallium arsenide with tin-doped channel. It is experimentally shown, that in contrast to usual phototransistors with tellurium-doped channels, gate photocurrents are constant, i.e. independent on blocking voltage, and these currents grow with light intensity increase. At that time total photo sensitivity is smoothly controlled by working voltage and it achieves high values, current sensitivity achieves 8.26×102 A/W, voltage sensitivity achieves 1.3×108 V/W.
M. Shur, Current Technology Devices Based on Gallium Arsenide (Mir, Moscow, 1991) [Russian translation].
I. M. Vikulin, L. F. Vikulina, and V. I. Staveev, “Magneto-Sensitive Transistors,” FTP 35, No. 1, 3 (2001).
S. A. Asimov, P. M. Karageorgiy-Alkalayev, A. V. Karimov, and M. Mirzabayev, “Speciality of Photo-Sensitivity of Gallium-Arsenide Structures of FET Type,” Izv. AN UzSSR. Ser. Fiz.-Mat. Nauk, No. 2, 44 (1979).
A. V. Karimov, “Research of Photo-Gain Properties of Field-Controlled Transistors,” Izv. AN UzSSR. Ser. Fiz.-Mat. Nauk, No. 3, 61 (1980).
M. Mirzabayev, A. V. Karimov, and A. V. Abdukadirov, “Research of Charge Carrir Distribution and Their Movability in Epitaxial Layers of Gallium Arsenide,” Izv. AN UzSSR. Ser. Fiz.-Mat. Nauk, No. 2, 52 (1977).
A. V. Karimov, Pat. Appl. No. 166399, Uzbekistan (8 May 1997).
V. G. Sidorov, D. V. Sidorov, and V. I. Sokolov, “Influence of Internal Stresses on Characteristics of Light Emission Diodes Based on Gallium Arsenide,” FTP 32, No. 11, 1393 (1998).
A. V. Karimov, N. L. Dmitruk, R. V. Konakova, et al., “Influence of Morphological Nonuniformities on Current Transport in Solar Cells Based on Heterostructures,” Elekronika (St. Petersburg), No. 4, 25 (2004).
S. M. Zi, Semiconductor Devices Physics, Book 1 (Mir, Moscow, 1984) [in Russian].
A. V. Karimov, Multifunctional Thin Junction Gallium Arsenide Structures (FAN, Tashkent, 1992) [in Russian].