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Specialities of optical FET with tin-doped junction channel

Dilbara M. Yodgorova


This paper deals with researches of phototransistor based on gallium arsenide with tin-doped channel. It is experimentally shown, that in contrast to usual phototransistors with tellurium-doped channels, gate photocurrents are constant, i.e. independent on blocking voltage, and these currents grow with light intensity increase. At that time total photo sensitivity is smoothly controlled by working voltage and it achieves high values, current sensitivity achieves 8.26×102 A/W, voltage sensitivity achieves 1.3×108 V/W.

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