Frequency responses of "metal—semiconductor" Schottky-barrier junctions
DOI:
https://doi.org/10.3103/S0735272706020105Abstract
The paper describes a new graph-analytic model of “metal — semiconductor” Schottky barrier junctions, which approximates actual frequency responses of equivalent capacitance and resistance of the equivalent circuit corresponding to the resistance and capacitance of the joint itself and of adjacent volumes. The model depicts the frequency response as a broken line with several segments.References
SIMMONS, J.G.; NADKARNI, G.S.; LANCASTER, M.С. "Alternating current electrical properties of highly doped insulating films," J. Appl. Phys., v.41, n.2, р.538-544, 1970. DOI: http://dx.doi.org/10.1063/1.1658709.
SIMMONS, J.G.; WEI, L.S. "Theory of transient emission current in MOS devices and the direct determination of interface trap parameters," Solid-State Electronics, v.17, n.2, р.117-124, 1974. DOI: http://dx.doi.org/10.1016/0038-1101(74)90059-8.
MAMEDOV, A.K. "Temperature-frequency characteristics of Schottky-barrier structures," RAN— Zhurnal Radioelektroniki, n.10, p.1-7, 2003.
SIMON, J.; ANDRE, J.-J. Molecular Semiconductors. Photoelectrical Properties and Solar Cells. Springer-Verlag, 1985.
FERNANDEZ-CANQUE, H.L.; ALLISON, J.; THOMPSON, M.J. "The capacitance of RF sputtered hydrogenated amorphous silicon, Schottky barrier diodes," J. Appl. Phys., v.54, n.12, р.7025-7033, 1983. DOI: http://dx.doi.org/10.1063/1.331968.
