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Simulation of temperature characteristics of silicon sensors operating at low injection levels

P. A. Yaganov


The thermal sensitivity of silicon bipolar structures is investigated as dependence of the nonequilibrium contact voltage of p–n-junction on temperature. A model equation is derived to describe temperature characteristics of silicon sensors with p–n-junctions. Experimental dependencies of the voltage across the p–n-junction on temperature are compared with similar dependencies obtained in the model suggested.

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VENGER, Y.F.; KULISH, N.R.; SCHWARTZ, Y.M. Optoelektronika i Poluprovodnikovaya Tekhnika, n.32, p.83-86, 1997.

YAGANOV, P.A. Elektronika i Svyaz’, n.20, p.208-210, 2003.

VASIL’YEV, A.M.; LANDSMAN, A.P. Semiconductor Transducers [in Russian]. Moscow: Sov. Radio, 1971.

YAGANOV, P.A.; KLETCHENKOV, I.I. Dielektriki i Poluprovodniki, n.31, p.89-95, 1987.

TYAGI, M.S. Minority carrier recombination in heavily-doped silicon. Solid-State Electronics, v.26, n.6, p.577-597, 1983. DOI:

MNATSAKANOV, T.T.; POMORTSEVA, L.I.; SHUMAN, V.B. Fizika i Tekhnika Poluprovodnikov, v.31, n.7, p.833-835, 1997.

SZE, S.M. Physics of Semiconductor Devices, 2nd ed. Wiley, 1981.

STRIKHA, V.I. Contact Phenomena in Semiconductors [in Russian]. Kiev: Vyshcha Shkola, 1982.

GORBAN’, A.P.; ZUYEV, V.A.; KOSTYLYOV, V.P.; SACHENKO, A.V.; SERBA, A.A.; CHERNENKO, V.V. Optoelektronika I Poluprovodnikovaya Tekhnika, n.36, p.161-165, 2001.



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