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Asymmetric double-barrier tunnel junctions in niobium nitride

S. Yu. Larkin, V. Ye. Shaternik

Abstract


It is shown that the tunnel junctions created from NbN–I–Pb are essentially asymmetric double-barrier junctions. Formation of persistent Andreyev’s state in such junctions is analyzed.

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References


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DOI: https://doi.org/10.3103/S0735272705060026

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