The impact of the second mode on efficiency of energy conversion in a Gunn diode with intricate cathode

Authors

  • V. I. Kanevskii Chungbuk National University, Cheongju, Korea, Republic of
  • Ik-Wan Che National Technical University of Ukraine "Kyiv Polytechnic Institute", Ukraine
  • V. Ye. Chaika National Technical University of Ukraine "Kyiv Polytechnic Institute", Ukraine

DOI:

https://doi.org/10.3103/S0735272703020031

Abstract

The paper is devoted to qualitative investigation of the influence of the second mode of oscillation on the energy conversion efficiency in n-GaAs Gunn diodes with a complex cathode. The presence of the second mode of the field is shown to increase the diode efficiency by 10–20%. A new structure of Gunn diode is suggested, which involves special cathode quasi-island ohmic contacts and a built-in triangular barrier in the diode active region.

Author Biography

V. I. Kanevskii, Chungbuk National University, Cheongju

(2003) National Technical University of Ukraine "Kyiv Polytechnic Institute"

References

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KANEVSKII, V.I.; KOZYREV, Yu.N.; SUKHINA, Yu.Ye.; POBOKIN, D.Ye. "Fizicheskie protcessy v diodakh Ganna so slozhnym katodom (modelirovanie metodom Monte-Karlo)," Radiotekhnika i Elektronika, v.40, n.1, p.147-153, 1995.

KANEVSKII, V.I.; CHAIKA, V.Ye. "Modelirovanie fizicheskikh protcessov v diodakh Ganna s ostrovkovymi inzhektorami goriachikh elektronov," Izv. VUZ. Radioelektronika, v.43, n.8, p.73-80, 2000.

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CUROW, M.; HINTZ, A. "Numerical simulation of nonstationary electron transport in Gunn devices in a harmonic mode oscillator circuit," IEEE Trans. Electron Devices, v.34, n.9, p.1983-1994, 1987. DOI: https://doi.org/10.1109/T-ED.1987.23185.

Published

2003-02-03

Issue

Section

Research Articles