Silicon photonic infrared-wave emitter




single-crystal silicon, photonic infrared-wave emitter, antireflective coating


This study proposes an approach for building high quality cheap emitters in mid-wave (MW) and long-wave (LW) infrared spectrum bands. A photonic infrared-wave emitter based on light down conversion from the region of fundamental absorption by semiconductor to infrared region has been proposed. The efficiency of such conversion does not depend on quantum yield of interband recombination. It increases with the rise of emitter temperature and can be optically controlled. Such device has a large working surface area with spectral characteristics that do not depend on the forbidden bandwidth in semiconductor. The calculated and experimental characteristics of the power of silicon photonic emitter in 3–5 μm and 8–12 μm wavelength bands as a function of the temperature and intensity of exciting radiation are also presented. The parameters of the known emitters and proposed one are compared, and the technological description of the proposed device is presented.


N. Schäfer, J. Scheuermann, R. Weih, J. Koeth, S. Höfling, “High efficiency mid-infrared interband cascade LEDs grown on low absorbing substrates emitting >5 mW of output power,” Opt. Eng., vol. 58, no. 11, p. 1, 2019, doi:

N. D. Il’inskaya et al., “InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths,” Tech. Phys., vol. 63, no. 2, pp. 226–229, 2018, doi:

M. P. Mikhailova, K. D. Moiseev, Y. P. Yakovlev, “Discovery of III–V Semiconductors: Physical Properties and Application,” Semiconductors, vol. 53, no. 3, pp. 273–290, 2019, doi:

V. K. Malyutenko et al., “Current crowding in InAsSb light-emitting diodes,” Appl. Phys. Lett., vol. 79, no. 25, pp. 4228–4230, 2001, doi:

O. M. Williams, “Dynamic infrared scene projection: a review,” Infrared Phys. Technol., vol. 39, no. 7, pp. 473–486, 1998, doi:

V. K. Malyutenko et al., “Synthetic IR signature control using emissivity enhancement techniques,” in Proceedings of SPIE - The International Society for Optical Engineering, 2004, vol. 5408, p. 118, doi:

V. K. Malyutenko, V. V. Bogatyrenko, O. Y. Malyutenko, S. V. Chyrchyk, “Si infrared pixelless photonic emitter,” in Proceedings of SPIE - The International Society for Optical Engineering, 2005, vol. 5957, p. 59570D, doi:

V. K. Malyutenko, “Si photonics expands to mid-wave and long-wave infrared: the fundamentals and applications,” in Silicon Photonics XI, 2016, vol. 9752, p. 97521D, doi:

S. V. Chyrchyk, “Express method of finding recombination parameters in technological silicon plates,” Radioelectron. Commun. Syst., vol. 55, no. 3, pp. 136–139, 2012, doi:

O. V. Vakulenko, M. P. Lysytsia, “Investigation of infrared absorption in silicon at high temperatures,” Ukr. J. Phys., vol. 9, no. 12, pp. 1300–1305, 1964.

M. P. Lisitsa, V. N. Malinko, E. V. Pidlisnyi, G. G. Tsebulya, “Light absorption by free carriers in silicon at high temperatures with due regard for subsurface effects,” Ukr. J. Phys., vol. 14, no. 11, pp. 1915–1917, 1969.

A. I. Anselm, Introduction to Semiconductor Theory: Text Book, [in Russian]. St. Petersburg: Lan, 2017.

K. Rajkanan, R. Singh, J. Shewchun, “Absorption coefficient of silicon for solar cell calculations,” Solid-State Electron., vol. 22, no. 9, pp. 793–795, 1979, doi:

H. R. Philipp, E. A. Taft, “Optical Constants of Silicon in the Region 1 to 10 eV,” Phys. Rev., vol. 120, no. 1, pp. 37–38, 1960, doi:

F. A. Johnson, “Lattice bands in diamond and zinc blende crystals,” in Progress in Semiconductors. Volume 9, London: Heywood, 1965, p. 235.

R. A. Smith, Semiconductors, 2nd ed. Cambridge: Cambridge University Press, 1978.

V. I. Staroselskii, Physics of Semiconductor Devices for Microelectronic Circuitry, [in Russian]. Moscow: Yurayt, 2019.

R. M. Robinson, J. Oleson, L. Rubin, S. W. McHugh, “MIRAGE: system overview and status,” in Technologies for Synthetic Environments: Hardware-in-the-Loop Testing V, 2000, vol. 4027, pp. 387–398, doi:





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