Nonlinearity characteristics of selective amplifiers based on negative-feedback transistors

Abstract

Among the definitive amplifier parameters characterizing the efficiency of amplifier application under conditions of a complex electromagnetic environment (EME) are the nonlinearity parameters of the active devices. In order to reduce the latter, extensive use is made of resistive negative feedback (NFB) (see [1]). The minimum values of the nonlinearity parameters which can be achieved in engineering practice when implementing NFB are of interest.