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Nonlinearity characteristics of selective amplifiers based on negative-feedback transistors

V. V. Palshkov

Abstract


Among the definitive amplifier parameters characterizing the efficiency of amplifier application under conditions of a complex electromagnetic environment (EME) are the nonlinearity parameters of the active devices. In order to reduce the latter, extensive use is made of resistive negative feedback (NFB) (see [1]). The minimum values of the nonlinearity parameters which can be achieved in engineering practice when implementing NFB are of interest.

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References


VOISHVILLO, G.V. Amplifier Devices [in Russian].Moscow: Radio i Svyaz, 1983.

BOGDANOVICH, B.N. Radio-Reception Devices Having a Large Dynamic Range [in Russian]. Moscow: Radio i Svyaz, 1984.

GOLUBEV, V.N. Effective Selectivity of Radio-Reception Devices [in Russian]. Moscow: Svyaz, 1978.




DOI: https://doi.org/10.3103/S073527271990070263

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