Nonlinearity characteristics of selective amplifiers based on negative-feedback transistors
V. V. Palshkov
Among the definitive amplifier parameters characterizing the efficiency of amplifier application under conditions of a complex electromagnetic environment (EME) are the nonlinearity parameters of the active devices. In order to reduce the latter, extensive use is made of resistive negative feedback (NFB) (see ). The minimum values of the nonlinearity parameters which can be achieved in engineering practice when implementing NFB are of interest.