On mechanism of radiative sensitivity of power diode direct voltage drop

Authors

  • Abdulaziz V. Karimov Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan
  • Akhmad Z. Rakhmatov "Foton" Joint-stock Company, Tashkent, Uzbekistan
  • Stanislav P. Skorniakov Novosibirsk Plant of Semiconductor Devices, Russian Federation
  • Dilbara M. Yodgorova Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan
  • Abduvaxob A. Karimov Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan
  • Shukurullo M. Kuliev Physical-Technical Institute of the Scientific Association "Physics-Sun" of Academy Sciences of Republic of Uzbekistan, Uzbekistan

DOI:

https://doi.org/10.3103/S0735272717060048

Keywords:

power diod, drop of direct voltage, electrons radiation, lifetime of the minority charge carriers

Abstract

There are carried out experimental researches of dependence of drop of direct voltage of current-voltage characteristics of the silicone power diode on electrons radiation dose. It is stated that dose increase from 2×1014 to 2×1015 Фe/cm2 results in direct voltage drop on the diode increases monotonically, and the lifetime of the minority charge carriers decreases by a factor of ten. It is shown the dominating role of decrease of minority charge carriers density in the base together with majority charge carries lifetime at forming of current-voltage characteristics of after irradiation by electrons.

References

ABDULLAEV, O.R.; DRENIN, A.S.; LAGOV, P.B.; FILATOV, M.Y. The effects of exposure to fast electron radiation on high-frequency Si PIN diodes and Schottky barrier diodes. Naukoemkie Tekhnologii, v.14, n.11, p.51-56, 2013, http://www.radiotec.ru/catalog.php?cat=jr8&art=13609.

LYKOV, A.I.; SINITSIN, V.S.; SAVELYEV, A.A. Radiation controlling the properties of primary temperature converters. Odes’kyi Politechnichnyi Universystet. Pratsi, n.1, p.1-2, 2004, http://opu.ua/upload/files/fspi/SavTrOPU2004.pdf.

ZHUKOVA, N.S.; KRYMKO, M.M.; LEDOVSKIKH, A.P.; MAKSIMOV, A.N.; SOPOV, O.V. Analyze of the lifetime decrease method of a back resistance of the power high-speed diodes. Elekronnaya Tekhnika, Ser. 2. Poluprovodnikovye Pribory, n.1, p.83-87, 2010, https://elibrary.ru/item.asp?id=15103376.

RAKHMATOV, A.Z.; KARIMOV, A.V.; SANDLER, L.S.; YODGOROVA, D.M.; SKORNIAKOV, S.P. An influence of gamma- and electron radiation on basic properties of power high-frequency diffusion diodes. Komponenty i Tekhnologii, n.10, p.140-142, 2013.

SZE, S.M.; NG, KWOK K. Physics of Semiconductor Devices, 3rd ed. Wiley–Interscience, Hoboken–New Jersey, 2007. 832 p. ISSN 978-0-471-14323-9.

VOLOGDIN, E.N.; LYSENKO, A.P. Radiative Effects in Definite Type Semiconductor Devices [in Russian]. Moscow, 2001.

GURTOV, V.A. Solid-State Electronics [in Russian]. Moscow, 2005.

Published

2017-06-30

Issue

Section

Research Articles