Methodology of built and verification of non-linear EEHEMT model for GaN HEMT transistor

Authors

  • A. A. Kokolov Tomsk State University of Control Systems and Radioelectronics, Russian Federation https://orcid.org/0000-0002-8910-4329
  • L. I. Babak Tomsk State University of Control Systems and Radioelectronics, Russian Federation

DOI:

https://doi.org/10.3103/S0735272715100015

Keywords:

microwave transistor, non-linear model, extraction, measurements, load characteristics, GaN HEMT

Abstract

It is considered a formalized methodology allowing to realize the extraction of the parameters of non-linear EEHEMT model for ultra-high frequency FET on a basis of measured low-signal S-parameters and voltage-current characteristics. We built a model of domestic 0.15 µm GaN HEMT transistor, operating in millimeter wavelength range as an example. Correctness and accuracy of the non-linear model obtained were verified by means of measurement of the output power and load characteristics of the transistor in large-signal operation.

References

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Published

2015-10-16

Issue

Vol. 58 No. 10 (2015)

Section

Research Articles