DOI: https://doi.org/10.3103/S0735272715070018
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Microwave class F power amplifier with load network

Load network for microwave class F amplifier

Andrii P. Yefymovych, Vladimir G. Krizhanovski, Vyacheslav A. Kovalenko, Rocco Giofrè, Paolo Colantonio, Riccardo Danieli

Abstract


In this paper we present the technique for development and calculation of the load network for the microwave class F power amplifier (PA) with addition of the third and the fifth voltage harmonics. The suggested load network compensates negative influence of parasitic elements of the transistor (of output capacitance and of output inductance) on the operation of class F PA. Also the load network allows one to decrease the negative influence of some real properties of the supply circuit shunt capacitor and the blocking capacitor on the impedances, which are created by the load network at the transistor chip. We have obtained the calculation formula for the transistor load resistance at the specified output power for class F PA with addition of the third and the fifth voltage harmonics.

Keywords


class F power amplifier; load network; parasitic elements

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References


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